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TPC8108 Datasheet

  • TPC8108

  • Silicon P Channel MOS Type (U-MOSIII)

  • 7頁

  • TOSHIBA

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TPC8108
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOSIII)
TPC8108
Lithium Ion Battery Applications
Notebook PC Applications
Portable Equipment Applications
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
Small footprint due to small and thin package
Low drain-source ON resistance: R
DS (ON)
= 9.5 m鈩?(typ.)
High forward transfer admittance: |Y
fs
| = 24 S (typ.)
Low leakage current: I
DSS
=
鈭?0
碌A(chǔ) (max) (V
DS
=
鈭?0
V)
Enhancement-mode: V
th
=
鈭?.8
to
鈭?.0
V (V
DS
=
鈭?0
V, I
D
=
鈭?
mA)
Unit: mm
Maximum Ratings
(Ta = 25擄C)
Characteristics
Drain-source voltage
Drain-gate voltage (R
GS
=
20 k鈩?
Gate-source voltage
Drain current
DC
Pulse
(Note 1)
(Note 1)
(t
=
10 s)
(Note 2a)
Drain power dissipation
(t
=
10 s)
(Note 2b)
Single pulse avalanche energy
(Note 3)
Avalanche current
Repetitive avalanche energy
(Note 2a) (Note 4)
Channel temperature
Storage temperature range
Symbol
V
DSS
V
DGR
V
GSS
I
D
I
DP
P
D
P
D
E
AS
I
AR
E
AR
T
ch
T
stg
Rating
鈭?0
鈭?0
鹵20
鈭?1
鈭?4
1.9
Unit
V
V
V
A
JEDEC
JEITA
TOSHIBA
鈥?/div>
鈥?/div>
2-6J1B
Drain power dissipation
W
1.0
W
Weight: 0.080 g (typ.)
157
鈭?1
0.19
150
鈭?5
to 150
mJ
A
mJ
擄C
擄C
Circuit Configuration
8
7
6
5
Note: For (Note 1), (Note 2), (Note 3) and (Note 4), please refer to the
next page.
This transistor is an electrostatic sensitive device. Please handle with
caution.
1
2
3
4
1
2002-03-12

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