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TPC8106-H Datasheet

  • TPC8106-H

  • SILICON P CHANNEL MOS TYPE

  • 514.43KB

  • 7頁

  • TOSHIBA

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TPC8106-H
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (High Speed U鈭扢OSII)
TPC8106鈭扝
High Speed and High Efficiency DC鈭扗C Converters
Lithium Ion Battery Applications
Notebook PC Applications
Portable Equipment Applications
Small footprint due to small and thin package
High speed switching
Small gate charge
Low drain鈭抯ource ON resistance
: Qg = 52 nC (typ.)
: R
DS (ON)
=
14
m鈩?(typ.)
Unit: mm
High forward transfer admittance : |Y
fs
| =
16.6
S (typ.)
Low leakage current : I
DSS
=
鈭?0
碌A(chǔ) (max) (V
DS
=
鈭?0
V)
Enhancement鈭抦ode : V
th
=
鈭?.8~ 鈭?.0
V (V
DS
=鈭?/div>
10
V, I
D
=
鈭?
mA)
Maximum Ratings
(Ta = 25擄C)
Characteristics
Drain-source voltage
Drain-gate voltage (R
GS
= 20 k鈩?
Gate-source voltage
Drain current
DC
Pulse
(Note 1)
(Note 1)
(t = 10 s)
(Note 2a)
(t = 10 s)
(Note 2b)
Symbol
V
DSS
V
DGR
V
GSS
I
D
I
DP
P
D
P
D
E
AS
I
AR
E
AR
T
ch
T
stg
Rating
鈭?0
鈭?0
鹵20
鈭?0
鈭?0
2.4
1.0
130
鈭?0
0.24
150
鈭?5
to 150
Unit
V
V
V
A
W
W
mJ
A
mJ
擄C
擄C
JEDEC
JEITA
TOSHIBA
鈥?/div>
鈥?/div>
2-6J1B
Weight: 0.080 g (typ.)
Drain power dissipation
Drain power dissipation
Circuit Configuration
Single pulse avalanche energy
(Note 3)
Avalanche current
Repetitive avalanche energy
(Note 2a) (Note 4)
Channel temperature
Storage temperature range
Note: For (Note 1), (Note 2), (Note 3) and (Note 4), please refer to the
next page.
This transistor is an electrostatic sensitive device. Please handle with
caution.
1
2002-02-06

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