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TPC8104-H Datasheet

  • TPC8104-H

  • TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (...

  • 7頁(yè)

  • TOSHIBA

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TPC8104-H
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (High Speed U鈭扢OSII)
TPC8104鈭扝
High Speed and High Efficiency DC鈭扗C Converters
Lithium Ion Battery Applications
Notebook PCs
Portable Equipment Applications
l
Small footprint due to small and thin package
l
High speed switching
l
Small gate charge
: Qg = 17 nC (typ.)
: R
DS (ON)
= 38 m鈩?(typ.)
l
Low drain鈭抯ource ON resistance
Unit: mm
l
High forward transfer admittance : |Y
fs
| = 7.0 S (typ.)
l
Low leakage current : I
DSS
=
鈭?0
碌A(chǔ) (max) (V
DS
=
鈭?0
V)
l
Enhancement鈭抦ode : V
th
=
鈭?.8~鈭?.0
V (V
DS
=
鈭?0
V, I
D
=
鈭?
mA)
Maximum Ratings
(Ta = 25擄C)
Characteristics
Drain-source voltage
Drain-gate voltage (R
GS
= 20 k鈩?
Gate-source voltage
Drain current
DC
Pulse
(Note 1)
(Note 1)
(t = 10 s)
(Note 2a)
(t = 10 s)
(Note 2b)
Symbol
V
DSS
V
DGR
V
GSS
I
D
I
DP
P
D
P
D
E
AS
I
AR
E
AR
T
ch
T
stg
Rating
鈭?0
鈭?0
鹵20
鈭?
鈭?0
2.4
1.0
32.5
鈭?
0.24
150
鈭?5
to 150
Unit
V
V
V
A
W
W
mJ
A
mJ
擄C
擄C
JEDEC
JEITA
TOSHIBA
鈥?/div>
鈥?/div>
2-6J1B
Drain power dissipation
Drain power dissipation
Weight: 0.080 g (typ.)
Single pulse avalanche energy
(Note 3)
Avalanche current
Repetitive avalanche energy
(Note 2a) (Note 4)
Channel temperature
Storage temperature range
Circuit Configuration
Note: For (Note 1), (Note 2), (Note 3) and (Note 4), please refer to the
next page.
This transistor is an electrostatic sensitive device. Please handle with
caution.
1
2002-09-11

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