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TPC8010-H Datasheet

  • TPC8010-H

  • TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (...

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  • TOSHIBA

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TPC8010-H
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (High speed U-MOSIII)
TPC8010-H
DC-DC Converters
Notebook PC Applications
Portable Equipment Applications
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
Small footprint due to small and thin package
High speed switching
Small gate charge: Q
g
= 18 nC (typ.)
Low drain-source ON resistance: R
DS (ON)
= 12 m鈩?(typ.)
High forward transfer admittance: |Y
fs
| = 11 S (typ.)
Low leakage current: I
DSS
= 10 碌A(chǔ) (max) (V
DS
= 30 V)
Enhancement mode: V
th
= 1.1 to 2.3 V (V
DS
= 10 V, I
D
= 1 mA)
Unit: mm
Maximum Ratings
(Ta
=
25擄C)
Characteristics
Drain-source voltage
Drain-gate voltage (R
GS
=
20 k鈩?
Gate-source voltage
Drain current
DC
Pulse
(Note 1)
(Note 1)
(t
=
10 s)
(Note 2a)
Drain power dissipation
(t
=
10 s)
(Note 2b)
Single pulse avalanche energy
(Note 3)
Avalanche current
Repetitive avalanche energy
(Note 2a) (Note 4)
Channel temperature
Storage temperature range
Symbol
V
DSS
V
DGR
V
GSS
I
D
I
DP
P
D
P
D
E
AS
I
AR
E
AR
T
ch
T
stg
Rating
30
30
鹵20
11
44
1.9
Unit
V
V
V
A
JEDEC
JEITA
TOSHIBA
鈥?/div>
鈥?/div>
2-6J1B
Drain power dissipation
W
Weight: 0.080 g (typ.)
1.0
W
Circuit Configuration
157
11
0.19
150
鈭?5
to 150
mJ
A
mJ
擄C
擄C
1
2
3
4
8
7
6
5
Note: For (Note 1), (Note 2), (Note 3) and (Note 4), please refer to the
next page.
This transistor is an electrostatic sensitive device. Please handle with
caution.
1
2002-03-12

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