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TPC8005-H Datasheet

  • TPC8005-H

  • Silicon N Channel MOS Type (High Speed U−MOS)

  • 7頁

  • TOSHIBA

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TPC8005-H
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (High Speed U鈭扢OS)
TPC8005鈭扝
High Speed and High Efficiency DC鈭扗C Converters
Lithium Ion Battery Applications
Portable Equipment Applications
Notebook PC Applications
Small footprint due to small and thin package
High speed switching : 60% speed up (compare with current type)
Small gate charge
: Qg = 20 nC (typ.)
: R
DS (ON)
=
13
m鈩?(typ.)
Low drain鈭抯ource ON resistance
Unit: mm
High forward transfer admittance : |Y
fs
| =
16
S (typ.)
Low leakage current : I
DSS
=
10
碌A (max) (V
DS
= 30 V)
Enhancement鈭抦ode : V
th
=
1.3~2.5
V (V
DS
=
10
V, I
D
=
1
mA)
Maximum Ratings
(Ta = 25擄C)
Characteristics
Drain-source voltage
Drain-gate voltage (R
GS
= 20 k鈩?
Gate-source voltage
Drain current
DC
Pulse
(Note 1)
(Note 1)
(t = 10 s)
(Note 2a)
(t = 10 s)
(Note 2b)
Symbol
V
DSS
V
DGR
V
GSS
I
D
I
DP
P
D
P
D
E
AS
I
AR
E
AR
T
ch
T
stg
Rating
30
30
鹵20
11
44
2.4
1.0
157
11
0.24
150
鈭?5
to 150
Unit
V
V
V
A
W
W
JEDEC
JEITA
TOSHIBA
鈥?/div>
鈥?/div>
2-6J1B
Drain power dissipation
Drain power dissipation
Weight: 0.080 g (typ.)
Single pulse avalanche energy
(Note 3)
Avalanche current
Repetitive avalanche energy
(Note 2a) (Note 4)
Channel temperature
Storage temperature range
Circuit Configuration
mJ
A
mJ
擄C
擄C
Note: For (Note 1), (Note 2), (Note 3) and (Note 4), please refer to the
next page.
This transistor is an electrostatic sensitive device. Please handle with
caution.
1
2002-02-06

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