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TPC6201 Datasheet

  • TPC6201

  • TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (...

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  • TOSHIBA

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TPC6201
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSII)
TPC6201
HDD Motor Drive Applications
Notebook PC Applications
Portable Equipment Applications
路
路
路
路
Low drain-source ON resistance: R
DS (ON)
= 80 m鈩?(typ.)
High forward transfer admittance: |Y
fs
| = 3.8 S (typ.)
Low leakage current: I
DSS
=
10
碌A(chǔ) (max) (V
DS
= 30 V)
Enhancement-model: V
th
=
1.3
to 2.5 V (V
DS
=
10
V, I
D
=
1
mA)
Unit: mm
Maximum Ratings
(Ta
=
25擄C)
Characteristics
Drain-source voltage
Drain-gate voltage (R
GS
=
20 kW)
Gate-source voltage
Drain
current
DC
Pulse
(Note 1)
(Note 1)
Symbol
V
DSS
V
DGR
V
GSS
I
D
I
DP
P
D
(1)
P
D
(2)
P
D
(1)
P
D
(2)
E
AS
I
AR
(Note 5)
E
AR
T
ch
T
stg
Rating
30
30
鹵20
2.5
10
0.9
W
0.76
0.4
W
0.31
1.0
1.25
0.16
150
-55
to 150
mJ
A
mJ
擄C
擄C
1
2
3
Unit
V
V
V
A
Drain power Single-device operation
(Note 3a)
dissipation
(t
=
5 s)
Single device value at
(Note 2a) dual operation (Note 3b)
Drain power Single-device operation
(Note 3a)
dissipation
(t
=
5 s)
Single device value at
(Note 2b) dual operation (Note 3b)
Single pulse avalanche energy (Note 4)
Avalanche current
Repetitive avalanche energy
Channel temperature
Storage temperature range
JEDEC
JEITA
TOSHIBA
鈥?/div>
鈥?/div>
2-3T1B
Weight: 0.011 g (typ.)
Circuit Configuration
6
5
4
Thermal Characteristics
Marking (Note 6)
Characteristics
Symbol
Max
139
擄C/W
165
310
擄C/W
400
Unit
Single-device operation
R
th (ch-a)
(2)
Thermal Resistance
(Note 3a)
(channel-to-ambient)
(t
=
5 s)
(Note 2a) Single device value at
R
(2)
dual operation (Note 3b)
th (ch-a)
Single-device operation
R
th (ch-a)
(2)
Thermal Resistance
(Note 3a)
(channel-to-ambient)
(t
=
5 s)
(Note 2b) Single device value at
R
th (ch-a)
(2)
dual operation (Note 3b)
S4A
Note: (Note 1), (Note 2), (Note 3), (Note 4), (Note 5), (Note 6) Please see next page.
This transistor is an electrostatically sensitive device. Please handle it with caution.
1
2002-01-17

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