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TPC6108 Datasheet

  • TPC6108

  • TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (...

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TPC6108
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS鈪?
TPC6108
Notebook PC Applications
Portable Equipment Applications
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
Small footprint due to small and thin package
Low drain-source ON resistance: R
DS (ON)
= 50 m鈩?(typ.)
High forward transfer admittance: |Y
fs
| = 7.4 S (typ.)
Low leakage current: I
DSS
=
鈭?0
碌A(chǔ) (max) (V
DS
=
鈭?0
V)
Enhancement-model: V
th
=
鈭?.8
to
鈭?.0
V
(V
DS
=
鈭?0
V, I
D
=
鈭?
mA)
TENTATIVE
Unit: mm
Maximum Ratings
(Ta
=
25擄C)
Characteristics
Drain-source voltage
Drain-gate voltage (R
GS
=
20 k鈩?
Gate-source voltage
Drain current
DC
Pulse
Drain power dissipation(t
=
5 s)
Drain power dissipation(t
=
5 s)
Single pulse avalanche energy
Avalanche current
Repetitive avalanche energy
Single-device value at dual operation
(Note 2a, 3b, 5)
Channel temperature
Storage temperature range
(Note 1)
(Note 1)
(Note 2a)
(Note 2b)
(Note 4)
Symbol
V
DSS
V
DGR
V
GSS
I
D
I
DP
P
D
P
D
E
AS
I
AR
E
AR
T
ch
T
stg
Rating
鈭?0
鈭?0
鹵20
鈭?.5
鈭?8
2.2
0.7
1.3
鈭?.25
0.22
150
鈭?5~150
mJ
A
mJ
Unit
V
V
V
A
Drain
Drain
Gate
Source
Drain
Drain
JEDEC
W
鈥?/div>
鈥?/div>
2-3T1A
JEITA
TOSHIBA
Weight: 0.011 g (typ.)
Circuit Configuration
擄C
擄C
6
5
4
Thermal Characteristics
Characteristics
Thermal resistance, channel to ambient(t
=
5 s)
(Note 2a)
Thermal resistance, channel to ambient(t
=
5 s)
(Note 2b)
Symbol
Max
Unit
1
R
th (ch-a)
56.8
擄C/W
2
3
R
th (ch-a)
178.5
擄C/W
Note: For (Note 1), (Note 2), (Note 3), (Note 4) and (Note 5), please refer
to the next page.
This transistor is an electrostatic sensitive device. Please handle with
caution.
1
2004-10-28

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