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TPC6103 Datasheet

  • TPC6103

  • Silicon P Channel MOS Type (U-MOS III)

  • 7頁

  • TOSHIBA

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TPC6103
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS III)
TPC6103
Notebook PC Applications
Portable Equipment Applications
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
Low drain-source ON resistance: R
DS (ON)
= 29 m鈩?(typ.)
High forward transfer admittance: |Y
fs
| = 13 S (typ.)
Low leakage current: I
DSS
=
鈭?0
碌A (max) (V
DS
=
鈭?2
V)
Enhancement mode: V
th
=
鈭?.5
to
鈭?.2
V
(V
DS
=
鈭?0
V,I
D
=
鈭?00
碌A)
Unit: mm
Maximum Ratings
(Ta
=
25擄C)
Characteristics
Drain-source voltage
Drain-gate voltage (R
GS
=
20 k鈩?
Gate-source voltage
Drain current
Drain power dissipation
Drain power dissipation
DC
(Note 1)
Symbol
V
DSS
V
DGR
V
GSS
I
D
I
DP
P
D
P
D
E
AS
I
AR
E
AR
T
ch
T
stg
Rating
鈭?2
鈭?2
鹵8
鈭?.5
鈭?2
2.2
0.7
5.3
鈭?.75
0.22
150
鈭?5~150
Unit
V
V
V
A
Pulse (Note 1)
(t
=
5 s)
(Note 2a)
(t
=
5 s)
(Note 2b)
JEDEC
W
W
mJ
A
mJ
擄C
擄C
6
5
鈥?/div>
鈥?/div>
2-3T1A
JEITA
TOSHIBA
Weight: 0.011 g (typ.)
Single pulse avalanche energy
(Note 3)
Avalanche current
Repetitive avalanche energy (Note 4)
Channel temperature
Storage temperature range
Circuit Configuration
4
Thermal Characteristics
Characteristics
Thermal resistance, channel to
ambient (t
=
5 s)
(Note 2a)
Thermal resistance, channel to
ambient (t
=
5 s)
(Note 2b)
Symbol
R
th (ch-a)
R
th (ch-a)
Max
56.8
178.5
Unit
擄C/W
擄C/W
1
2
3
Note 1, (ote 2, Note 3, Note 4 and Note 5: See the next page.
This transistor is an electrostatic-sensitive device. Please handle with caution.
1
2004-07-06

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