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TPC6101 Datasheet

  • TPC6101

  • TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (...

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TPC6101
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOSII)
TPC6101
Notebook PC Applications
Portable Equipment Applications
路
路
路
路
Low drain-source ON resistance: R
DS (ON)
= 48 m鈩?(typ.)
High forward transfer admittance: |Y
fs
| = 8.2 S (typ.)
Low leakage current: I
DSS
=
鈭?0
碌A(chǔ) (max) (V
DS
=
鈭?0
V)
Enhancement-model: V
th
=
鈭?.5
to
鈭?.2
V (V
DS
=
鈭?0
V,
I
D
=
鈭?00
碌A(chǔ))
Unit: mm
Maximum Ratings
(Ta
=
25擄C)
Characteristics
Drain-source voltage
Drain-gate voltage (R
GS
=
20 kW)
Gate-source voltage
DC
Drain current
(Note 1)
Pulse
(Note 1)
Drain power dissipation
(t
=
5 s)
(Note 2a)
Drain power dissipation
(t
=
5 s)
(Note 2b)
Single pulse avalanche energy (Note 3)
Avalanche current
Repetitive avalanche energy
Channel temperature
Storage temperature range
(Note 4)
Symbol
V
DSS
V
DGR
V
GSS
I
D
Rating
-20
-20
鹵12
-4.5
A
I
DP
-18
Unit
V
V
V
JEDEC
JEITA
鈥?/div>
鈥?/div>
2-3T1A
P
D
2.2
W
TOSHIBA
Weight: 0.011 g (typ.)
P
D
E
AS
I
AR
E
AR
T
ch
T
stg
0.7
3.3
-2.25
0.22
150
-55
to 150
W
mJ
A
mJ
擄C
擄C
Circuit Configuration
6
5
4
Thermal Characteristics
Characteristics
Thermal resistance, channel to ambient
(t
=
5 s)
(Note 2a)
Symbol
R
th (ch-a)
Max
56.8
Unit
1
2
3
Marking
(Note 5)
擄C/W
Thermal resistance, channel to ambient
(t
=
5 s)
(Note 2b)
R
th (ch-a)
178.5
擄C/W
S3A
Note: (Note 1), (Note 2), (Note 3), (Note 4), (Note 5) Please see next
page.
This transistor is an electrostatically sensitive device. Please handle it
with caution.
1
2002-01-17

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