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TPC6004 Datasheet

  • TPC6004

  • Notebook PC Applications Portable Equipment Applications Sil...

  • 203.71KB

  • 7頁

  • TOSHIBA

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TPC6004
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSIII)
TPC6004
Notebook PC Applications
Portable Equipment Applications
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
Low drain-source ON resistance: R
DS (ON)
= 19 m鈩?(typ.)
High forward transfer admittance: |Y
fs
| = 11 S (typ.)
Low leakage current: I
DSS
= 10 碌A(chǔ) (max) (V
DS
= 20 V)
Enhancement mode: V
th
= 0.5 to 1.2 V (V
DS
= 10 V, I
D
= 200 碌A(chǔ))
Unit: mm
Maximum Ratings
(Ta
=
25擄C)
Characteristics
Drain-source voltage
Drain-gate voltage (R
GS
=
20 k鈩?
Gate-source voltage
DC
(Note 1)
Pulse
(Note 1)
(t
=
5 s)
(Note 2a)
(t
=
5 s)
(Note 2b)
Symbol
V
DSS
V
DGR
V
GSS
I
D
I
DP
P
D
P
D
E
AS
I
AR
(Note 4)
E
AR
T
ch
T
stg
Rating
20
20
鹵12
6
A
24
Unit
V
V
V
Drain current
Drain power dissipation
Drain power dissipation
JEDEC
2.2
0.7
5.8
3
0.22
150
鈭?5
to 150
W
W
mJ
A
mJ
擄C
擄C
鈥?/div>
鈥?/div>
2-3T1A
JEITA
TOSHIBA
Single pulse avalanche energy (Note 3)
Avalanche current
Repetitive avalanche energy
Channel temperature
Storage temperature range
Weight: 0.011 g (typ.)
Circuit Configuration
6
5
4
Thermal Characteristics
Characteristics
Thermal resistance, channel to ambient
(t
=
5 s)
(Note 2a)
Thermal resistance, channel to ambient
(t
=
5 s)
(Note 2b)
Symbol
R
th (ch-a)
R
th (ch-a)
Max
56.8
178.5
Unit
擄C/W
擄C/W
1
2
3
Note: Note 1, Note 2, Note 3, Note 4 and Note 5: See the next page.
This transistor is an electrostatic-sensitive device. Please handle with caution.
1
2004-07-06

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