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TPC6003 Datasheet

  • TPC6003

  • TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (...

  • 159.07KB

  • 6頁

  • TOSHIBA

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TPC6003
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSIII)
TPC6003
Notebook PC Applications
Portable Equipment Applications
路
路
路
路
Low drain-source ON resistance: R
DS (ON)
= 19 m鈩?(typ.)
High forward transfer admittance: |Y
fs
| = 7 S (typ.)
Low leakage current: I
DSS
= 10 碌A(chǔ) (max) (V
DS
= 30 V)
Enhancement-model: V
th
= 1.3 to 2.5 V (V
DS
= 10 V, I
D
= 1 mA)
Unit: mm
Maximum Ratings
(Ta
=
25擄C)
Characteristics
Drain-source voltage
Drain-gate voltage (R
GS
=
20 kW)
Gate-source voltage
DC
Drain current
(Note 1)
Pulse
(Note 1)
Drain power dissipation
(t
=
5 s)
(Note 2a)
Drain power dissipation
(t
=
5 s)
(Note 2b)
Single pulse avalanche energy (Note 3)
Avalanche current
Repetitive avalanche energy
Channel temperature
Storage temperature range
(Note 4)
Symbol
V
DSS
V
DGR
V
GSS
I
D
Rating
30
30
鹵20
6
A
I
DP
24
Unit
V
V
V
JEDEC
W
鈥?/div>
鈥?/div>
2-3T1A
P
D
2.2
JEITA
TOSHIBA
P
D
E
AS
I
AR
E
AR
T
ch
T
stg
0.7
5.8
3
0.22
150
-55
to 150
W
mJ
A
mJ
擄C
擄C
Weight: 0.011 g (typ.)
Circuit Configuration
6
5
4
Thermal Characteristics
Characteristics
Thermal resistance, channel to ambient
(t
=
5 s)
(Note 2a)
Symbol
R
th (ch-a)
Max
56.8
Unit
擄C/W
1
2
3
Marking
(Note 5)
Thermal resistance, channel to ambient
(t
=
5 s)
(Note 2b)
R
th (ch-a)
178.5
擄C/W
Note: (Note 1), (Note 2), (Note 3), (Note 4), (Note 5) Please see next
page.
This transistor is an electrostatically sensitive device. Please handle it
with caution.
S2D
1
2002-01-15

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