鈥?/div>
Circuit board photomaster available upon request by contacting
RF Tactical Marketing in Phoenix, AZ.
TP62601
MICROWAVE
POWER
OSCILLATOR
TRANSISTOR
CASE 328A鈥?3, STYLE 3
(GP鈥?3)
MAXIMUM RATINGS
Rating
Collector鈥揈mitter Voltage
Collector鈥揃ase Voltage
Emitter鈥揃ase Voltage
Collector Current 鈥?Continuous
Operating Junction Temperature
Storage Temperature Range
Symbol
VCEO
VCBO
VEBO
IC
TJ
Tstg
Value
22
45
3.5
0.5
200
鈥?65 to + 200
Unit
Vdc
Vdc
Vdc
Adc
擄C
擄C
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case
Symbol
R
胃JC
Symbol
Min
Typ
Max
15
Unit
擄C/W
ELECTRICAL CHARACTERISTICS
Characteristic
Max
Unit
OFF CHARACTERISTICS
Collector鈥揈mitter Breakdown Voltage (IC = 20 mA, IB = 0)
Collector鈥揃ase Breakdown Voltage (IC = 1.0 mA, IE = 0)
Emitter鈥揃ase Breakdown Voltage (IE = 0.25 mA, IC = 0)
Collector鈥揈mitter Breakdown Voltage (IC = 20 mA, RBE = 10
鈩?
Collector Cutoff Current (VCB = 28 V, IE = 0)
V(BR)CEO
V(BR)CBO
V(BR)EBO
V(BR)CER
ICBO
22
45
3.5
50
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
0.125
Vdc
Vdc
Vdc
Vdc
mAdc
ON CHARACTERISTICS
DC Current Gain (IC = 100 mA, VCE = 5.0 V)
hFE
20
鈥?/div>
120
鈥?/div>
(continued)
REV 6
漏
MOTOROLA RF DEVICE DATA
Motorola, Inc. 1994
TP62601
1
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MICROWAVE POWER OSCILLATOR TRANSISTOR
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MICROWAVE POWER OSCILLATOR TRANSISTOR
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