鈥?/div>
Circuit board photomaster available upon request by contacting
RF Tactical Marketing in Phoenix, AZ.
TP3061
45 W, 960 MHz
UHF POWER
TRANSISTOR
NPN SILICON
CASE 333A鈥?2, STYLE 2
MAXIMUM RATINGS
Rating
Collector鈥揈mitter Voltage
Collector鈥揃ase Voltage
Emitter鈥揃ase Voltage
Collector Current 鈥?Continuous
Total Device Dissipation @ TC = 25擄C
Derate above 25擄C
Storage Temperature Range
Operating Junction Temperature
Symbol
VCER
VCBO
VEBO
IC
PD
Tstg
TJ
Value
40
48
4.0
10
175
1.0
鈥?65 to +150
200
Unit
Vdc
Vdc
Vdc
Adc
Watts
W/擄C
擄C
擄C
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case (1) at 70擄C Case
Symbol
R
胃JC
Symbol
Min
Typ
Max
1.2
Unit
擄C/W
ELECTRICAL CHARACTERISTICS
(TC = 25擄C unless otherwise noted.)
Characteristic
Max
Unit
OFF CHARACTERISTICS
Collector鈥揈mitter Breakdown Voltage
(IC = 60 mA, RBE = 75
鈩?
Emitter鈥揃ase Breakdown Voltage
(IC = 6.0 mAdc)
Collector鈥揃ase Breakdown Voltage (IE = 60 mAdc)
Collector鈥揈mitter Leakage (VCE = 26 V, RBE = 75
鈩?
V(BR)CER
V(BR)EBO
V(BR)CBO
ICER
40
3.5
48
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
15
Vdc
Vdc
Vdc
mA
(continued)
NOTE:
1. Thermal resistance is determined under specified RF operating condition.
REV 6
漏
MOTOROLA RF DEVICE DATA
Motorola, Inc. 1994
TP3061
1
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