鈥?/div>
Push鈥揚ull Configuration
TP3024B
35.5 W, 960 MHz
UHF LINEAR POWER
TRANSISTOR
MAXIMUM RATINGS
Rating
Emitter鈥揃ase Voltage
Operating Junction Temperature
Storage Temperature Range
Symbol
VEBO
TJ
Tstg
Value
4.0
200
鈥?65 to + 200
Unit
Vdc
擄C
擄C
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case (1)
(TC = 75擄C)
Symbol
R
胃JC
Max
3.0
Unit
擄C/W
CASE 395B鈥?1, STYLE 1
ELECTRICAL CHARACTERISTICS
(TC = 25擄C unless otherwise noted.)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector鈥揈mitter Breakdown Voltage
(IC = 10 mA, RBE = 75 Ohms)
Collector鈥揈mitter Leakage
(VCE = 26 V, RBE = 75 Ohms)
Emitter鈥揃ase Breakdown Voltage
(IC = 5.0 mAdc, IC = 0)
Emitter鈥揃ase Leakage
(VBE = 2.5 V)
V(BR)CER
ICER
V(BR)EBO
IEBO
40
鈥?/div>
3.5
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
5.0
鈥?/div>
1.0
Vdc
mA
Vdc
mA
ON CHARACTERISTICS
(2)
DC Current Gain
(IC = 500 mA, VCE = 10 V)
hFE
15
鈥?/div>
100
鈥?/div>
DYNAMIC CHARACTERISTICS
(1)
Output Capacitance
(VCB = 24 V, IE = 0, f = 1.0 MHz)
Cob
鈥?/div>
17
25
pF
FUNCTIONAL TESTS
(3)
Common鈥揈mitter Amplifier Power Gain
(VCE = 26 V, Pout = 35.5 W, f = 960 MHz, IQtotal = 150 mA)
Collector Efficiency
(VCE = 26 V, Pout = 35.5 W, f = 960 MHz, IQtotal = 150 mA)
GPE
畏
c
7.5
45
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
dB
%
NOTE:
1. Thermal resistance is determined under specified RF operating condition.
2. Each transistor chip measured separately.
3. Both transistor chips operating in push鈥損ull amplifier.
漏
MOTOROLA RF DEVICE DATA
Motorola, Inc. 1994
TP3024B
1
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