鈥?/div>
Circuit board photomaster available upon request by contacting
RF Tactical Marketing in Phoenix, AZ.
TP3005
4.0 W, 960 MHz
UHF POWER
TRANSISTOR
NPN SILICON
MAXIMUM RATINGS
Rating
Collector鈥揈mitter Voltage
Collector鈥揃ase Voltage
Emitter鈥揃ase Voltage
Collector Current 鈥?Continuous
Total Device Dissipation @ TC = 25擄C
Derate above 25擄C
Storage Temperature Range
Operating Junction Temperature
Symbol
VCER
VCBO
VEBO
IC
PD
Tstg
TJ
Value
40
48
4.0
2.0
25
0.2
鈥?65 to +150
200
Unit
Vdc
Vdc
Vdc
Adc
Watts
W/擄C
擄C
擄C
CASE 319鈥?7, STYLE 2
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case (1) at 70擄C Case
Symbol
R
胃JC
Max
7.0
Unit
擄C/W
ELECTRICAL CHARACTERISTICS
(TC = 25擄C unless otherwise noted.)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector鈥揈mitter Breakdown Voltage
(IC = 15 mA, RBE = 75
鈩?
Emitter鈥揃ase Breakdown Voltage
(IC = 3.0 mAdc)
Collector鈥揃ase Breakdown Voltage
(IE = 15 mAdc)
Collector鈥揈mitter Leakage
(VCE = 26 V, RBE = 75
鈩?
V(BR)CER
V(BR)EBO
V(BR)CBO
ICER
45
4.0
55
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
3.0
Vdc
Vdc
Vdc
mA
ON CHARACTERISTICS
DC Current Gain
(IC = 0.5 Adc, VCE = 10 Vdc)
hFE
15
鈥?/div>
100
鈥?/div>
(continued)
NOTE:
1. Thermal resistance is determined under specified RF operating condition.
REV 6
漏
MOTOROLA RF DEVICE DATA
Motorola, Inc. 1994
TP3005
1
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