TP2314
NPN SILICON HIGH FREQUENCY TRANSISTOR
PACKAGE STYLE TO-39 (CE)
DESCRIPTION:
The
TP2314
is a High Frequency
Transistor Designed for Large Signal
Power Amplifier Applications, With
Emitter Grounded to Case.
MAXIMUM RATINGS
I
V
P
DISS
T
J
T
STG
胃
JC
1.0 A
18 V
8.0 W @ T
C
= 25
O
C
-65
O
C to +200
O
C
-65
O
C to +200
O
C
22
O
C/W
1 = COLLECTOR
2 = BASE
3 = EMITTER
CHARACTERISTICS
SYMBOL
BV
CEO
BV
CES
BV
CBO
I
CBO
BV
EBO
h
FE
C
ob
G
PE
畏
I
C
= 10 mA
I
C
= 5.0 mA
I
C
= 5.0 mA
V
CB
= 15 V
I
E
= 1.0 mA
V
CE
= 5.0 V
V
CB
= 15 V
T
C
= 25
O
C
TEST CONDITIONS
MINIMUM
18
36
36
TYPICAL
MAXIMUM
UNITS
V
V
V
碌
A
V
---
250
4.0
I
C
= 250 mA
f = 1.0 MHz
P
out
= 40 W
f = 175 MHz
5.0
20
0.1
50
pF
W
%
V
CC
= 12.5 V
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE
鈥?/div>
NORTH HOLLYWOOD, CA 91605
鈥?/div>
(818) 982-1200
鈥?/div>
FAX (818) 765-3004
Specifications are subject to change without notice.
REV. A
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