Specification Comparison
Vishay Siliconix
TP0101K vs. TP0101T
Description:
Package:
Pin Out:
P-Channel,20-V (D-S) MOSFET, Low Threshold
SOT-23
Identical
Part Number Replacements:
TP0101K-T1-E3 Replaces TP0101T-T1-E3
TP0101K-T1-E3 Replaces TP0101T-T1
Summary of Performance:
The TP0101K is a technology upgrade with ESD protection to the original TP0101T. The ESD protection diodes on the gate
increases Gate-Body Leakage; otherwise, there is little variation regarding performance.
ABSOLUTE MAXIMUM RATINGS (T
A
= 25
o
C UNLESS OTHERWISE NOTED)
Parameter
Symbol
TP0101K
TP0101T
Unit
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
Continuous Source Current
(MOSFET Diode Conduction)
Power Dissipation
T
A
= 25擄C
T
A
= 70擄C
Operating Junction & Storage Temperature Range
Maximum Junction-to-Ambient
T
A
= 25擄C
T
A
= 70擄C
V
DS
V
GS
I
D
I
DM
I
S
P
D
T
j
& T
stg
R
thJA
-20
+8
-0.58
-0.46
-2
-0.3
0.35
0.22
-55 to 150
357
-20
+8
-0.6
-0.48
-3
-0.6
0.35
0.22
-55 to 150
357
W
擄C
擄C/W
A
V
SPECIFICATIONS (T
J
= 25
O
C UNLESS OTHERWISE NOTED)
Parameter
Static
Gate-Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
V
GS
= -4.5 V
V
GS
= -2.5 V
V
GS
= -4.5 V
V
GS
= -2.5 V
V
GS(th)
I
GSS
I
DSS
-1.2
I
D(on)
-0.5
0.42
r
DS(on)
g
fs
V
SD
Qg
Qgs
Qgd
Rg
0.64
1300
-0.9
1400
300
250
150
25
30
55
38
-1.2
2200
0.65
0.85
-0.5
-0.7
-1.0
+5000
-1
-2.5
-0.5
0.45
0.69
1300
-0.9
2020
180
720
NS
7
25
19
9
-1.2
3000
nC
鈩?/div>
12
35
30
15
ns
0.65
0.85
A
鈩?/div>
S
V
-0.5
-0.9
-1.5
+100
-1
V
nA
碌A(chǔ)
Symbol
Min
TP0101K
Typ
Max
Min
TP0101T
Typ
Max
Unit
Drain-Source On-Resistance
Forward Transconductance
Diode Forward Voltage
Dynamic
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Switching
a
Turn-On Time
t
d(on)
t
r
t
d(off)
t
f
35
45
85
60
Turn-Off Time
NS denotes not specified in original datasheet
Document Number 74071
11-May-05
www.vishay.com
VISHAY
1
