TN6727A
TN6727A
CB
E
TO-226
PNP General Purpose Amplifier
This device is designed for general purpose medium power amplifiers and switches requiring collector currents to
1A. Sourced from Process 77. See TN6726A for characteristics.
Absolute Maximum Ratings*
Symbol
V
CES
V
CBO
V
EBO
I
C
T
J,
T
stg
Parameter
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current - Continuous
T
A = 25擄C unless otherwise noted
Value
40
50
5
1.5
-55 to +150
Units
V
V
V
A
擄C
Operating and Storage Junction Temperature Range
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150擄C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics
Symbol
T
A = 25擄C unless otherwise noted
Max
Characteristic
TN6727A
P
D
R
胃JC
R
胃JA
Total Device Dissipation
Derate above 25擄C
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
1
8
50
125
W
mW/擄C
擄C/W
擄C/W
Units
漏
1997 Fairchild Semiconductor Corporation
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