TN6707A
TN6707A
NPN General Purpose Amplifier
鈥?These devices is designed for general purpose medium power
amplifiers and switches requiring collector currents to 1.0A
鈥?Sourced from process 39.
C
BE
TO-226
Absolute Maximum Ratings*
T
A
=25擄C unless otherwise noted
Symbol
V
CEO
V
CBO
V
EBO
I
C
T
J
, T
STG
Parameter
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current
- Continuous
Operating and Storage Junction Temperature Range
FPN660
80
100
5.0
1.2
-55 ~ +150
Units
V
V
V
A
擄C
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150擄C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Electrical Characteristics
T
A
=25擄C unless otherwise noted
Symbol
Off Characteristics
V
(BR)CEO
V
(BR)CBO
V
(BR)EBO
I
CBO
I
EBO
h
FE
Parameter
Test Conditions
I
C
= 10mA, I
B
= 0
I
E
= 100碌A(chǔ), I
E
= 0
I
E
= 1.0mA, I
C
= 0
V
CB
= 80V, I
E
= 0
V
EB
= 5.0V, I
C
= 0
V
CE
= 2.0V, I
C
= 50mA
V
CE
= 2.0V, I
C
= 250mA
V
CE
= 2.0V, I
C
= 500mA
I
C
= 500mA, I
B
= 50mA
I
C
= 1.0A, I
B
= 100mA
V
CE
= 2.0V, I
C
= 1.0A
V
CE
= 5.0V, I
C
= 200mA, f = 20MHz
V
CE
= 5.0V, I
C
= 50mA, f = 20MHz
2.5
50
40
40
25
Min.
80
100
5.0
0.1
0.1
Max.
Units
V
V
V
碌A(chǔ)
碌A(chǔ)
Collector-Emitter Breakdown Voltage *
Collector-Base Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector-Base Cutoff Current
Emitter-Base Cutoff Current
DC Current Gain
On Characteristics *
250
0.5
1.0
1.5
20
V
V
V
MHz
MHz
V
CE
(sat)
V
BE
(on)
h
fe
f
T
Collector-Emitter Saturation Voltage
Base-Emitter On Voltage
Output Capacitance
Current Gain Bandwidth Product
Small Signal Characteristics
* Pulse Test: Pulse Width
鈮?/div>
300碌s, Duty Cycle
鈮?/div>
2.0%
Thermal Characteristics
T
A
=25擄C unless otherwise noted
Symbol
P
D
R
胃JC
R
胃JA
Parameter
Total Device Dissipation
Derate above 25擄C
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Max.
1.0
8.0
50
125
Units
W
mW/擄C
擄C/W
擄C/W
漏2003 Fairchild Semiconductor Corporation
Rev. A, January 2003
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