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TN3467A Datasheet

  • TN3467A

  • PNP Switching Transistor

  • 165.88KB

  • 6頁(yè)

  • FAIRCHILD

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TN3467A / MMPQ3467
Discrete POWER & Signal
Technologies
TN3467A
MMPQ3467
E
B
E
B
E
B
E
B
C
TO-226
B
E
SOIC-16
C
C
C
C
C
C
C
C
PNP Switching Transistor
This device is designed for high speed saturated switching applications
at currents to 800 mA. Sourced from Process 70.
Absolute Maximum Ratings*
Symbol
V
CEO
V
CBO
V
EBO
I
C
T
J
, T
stg
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current - Continuous
TA = 25擄C unless otherwise noted
Parameter
Value
40
40
5.0
1.2
-55 to +150
Units
V
V
V
A
擄C
Operating and Storage Junction Temperature Range
*
These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1)
These ratings are based on a maximum junction temperature of 150 degrees C.
2)
These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics
Symbol
P
D
R
胃JC
R
胃JA
TA = 25擄C unless otherwise noted
Characteristic
Total Device Dissipation
Derate above 25擄C
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Effective 4 Die
Each Die
TN3467A
1.0
8.0
50
125
Max
MMPQ3467
1.0
8.0
Units
W
mW/擄C
擄C/W
擄C/W
擄C/W
擄C/W
125
240
漏
1997 Fairchild Semiconductor Corporation

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