Continental Device India Limited
An ISO/TS16949 and ISO 9001 Certified Company
NPN SILICON PLANAR SWITCHING TRANSISTOR
TN2222A
TO-237
Plastic Package
E BC
For use as a Medium Power Amplifier
ABSOLUTE MAXIMUM RATINGS
DESCRIPTION
Collector Emitter Voltage
Collector Base Voltage
Emitter Base Voltage
Collector Current Continuous
Power Dissipation @ T
a
=25潞C
Power Dissipation @ T
c
=25潞C
@ T
a
=25潞C PCB Land Area for
Collector Lead >1 sq inch
@ T
a
=25潞C with heat sink
Operating And Storage Junction
Temperature Range
THERMAL RESISTANCE
Junction to Case
Junction to Ambient in free air
Thermal Resistance >with PCB land
area for collector lead >1 sq inch
Thermal Resistance Junction to
Ambient with heat sink
P
D
SYMBOL
V
CEO
V
CBO
V
EBO
I
C
VALUE
40
75
6.0
800
0.75
2.2
1.2
1.5
T
j
, T
stg
- 55 to +150
UNIT
V
V
V
mA
W
W
W
W
潞C
R
th (j-c)
R
th (j-a)
R
th (j-a)
R
th (j-a)
57
167
104
83
潞C/W
潞C/W
潞C/W
潞C/W
ELECTRICAL CHARACTERISTICS (T
a
=25潞C unless specified otherwise )
DESCRIPTION
SYMBOL
TEST CONDITION
*V
CEO
I
C
=10mA, I
B
=0
Collector Emitter Voltage
V
CBO
I
C
=10碌A(chǔ), I
E
=0
Collector Base Voltage
V
EBO
Emitter Base Voltage
I
E
=10碌A(chǔ), I
C
=0
I
CEX
V
CE
=60V, V
EB(off)
=3V
Collector Cut Off Current
I
CBO
V
CB
=60V, I
E
=0
Collector Cut Off Current
V
CB
=60V, I
E
=0, T
a
=150潞C
I
EBO
V
EB
=3V, I
C
=0
Emitter Cut Off Current
I
BL
V
CE
=60V, V
EB(off)
=3V
Base Cut Off Current
h
FE
I
C
=0.1mA, V
CE
=10V
DC Current Gain
I
C
=1mA, V
CE
=10V
I
C
=10mA, V
CE
=10V
I
C
=150mA, V
CE
=10V
I
C
=150mA, V
CE
=1V
I
C
=500mA, V
CE
=10V
*Pulse Test: Pulse Width < 300碌s, Duty Cycle < 2%
碌
TN2222ARev080304E
MIN
40
75
6
MAX
10
10
10
10
20
35
50
75
100
50
40
UNIT
V
V
V
nA
nA
碌A(chǔ)
nA
nA
300
Continental Device India Limited
Data Sheet
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