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TN2010T Datasheet

  • TN2010T

  • N-Channel Enhancement-Mode MOSFET Transistor

  • 4頁

  • ETC

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TN2010T
N-Channel Enhancement-Mode MOSFET Transistor
Product Summary
V
(BR)DSS
Min (V)
200
r
DS(on)
Max (W)
11
V
GS(th)
(V)
0.8 to 3.0
I
D
(A)
0.12
Features
D
D
D
D
D
Low On-Resistance: 9.5
W
Secondary Breakdown Free: 220 V
Low Power/Voltage Driven
Low Input and Output Leakage
Excellent Thermal Stability
Benefits
D
D
D
D
D
Low Offset Voltage
Full-Voltage Operation
Easily Driven Without Buffer
Low Error Voltage
No High-Temperature
鈥淩un-Away鈥?/div>
Applications
D
High-Voltage Drivers: Relays, Solenoids,
Lamps, Hammers, Displays, Transistors, etc.
D
Telephone Mute Switches, Ringer Circuits
D
Power Supply, Converters
D
Motor Control
TO-236
(SOT-23)
G
1
3
D
S
2
Top View
TN2010T (R1)*
*Marking Code for TO-236
Absolute Maximum Ratings (T
A
= 25_C Unless Otherwise Noted)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
(T
J
= 150_C)
Pulsed Drain Current
a
Power Dissipation
Maximum Junction-to-Ambient
Operating Junction and Storage Temperature Range
Notes
a. Pulse width limited by maximum junction temperature.
Updates to this data sheet may be obtained via facsimile by calling Siliconix FaxBack, 1-408-970-5600. Please request FaxBack document #70203.
T
A
=
25_C
T
A
=
70_C
T
A
=
25_C
T
A
=
70_C
Symbol
V
DS
V
GS
I
D
I
DM
P
D
R
thJA
T
J
, T
stg
Limit
200
"20
0.12
0.08
0.34
0.35
0.22
357
鈥?5 to 150
Unit
V
A
W
_C/W
_C
Siliconix
S-52426鈥擱ev. C, 14-Apr-97
1

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