TN0201T
Vishay Siliconix
N-Channel 20鈥揤 (D鈥揝) MOSFET
PRODUCT SUMMARY
V
(BR)DSS
Min (V)
20
r
DS(on)
Max (W)
1.0 @ V
GS
= 10 V
1.4 @ V
GS
= 4.5 V
V
GS(th)
(V)
1.0 to 3.0
I
D
(A)
0.39
FEATURES
D
D
D
D
D
Low On-Resistance: 0.75
W
Low Threshold: <1.75 V
Low Input Capacitance: 65 pF
Fast Switching Speed: 15 ns
Low Input and Output Leakage
BENEFITS
D
D
D
D
D
Low Offset Voltage
Low-Voltage Operation
Easily Driven Without Buffer
High-Speed Circuits
Low Error Voltage
APPLICATIONS
D
Direct Logic-Level Interface: TTL/CMOS
D
Drivers: Relays, Solenoids, Lamps, Hammers,
Displays, Memories, Transistors, etc.
D
Battery Operated Systems
D
Solid-State Relays
TO-236
(SOT-23)
G
1
3
D
Marking Code: N1wll
N1 = Part Number Code for TN0201T
w
= Week Code
ll
= Lot Traceability
S
2
Top View
ABSOLUTE MAXIMUM RATINGS (T
A
= 25_C UNLESS OTHERWISE NOTED)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
J
= 150_C)
_
Pulsed Drain Current
a
Power Dissipation
Thermal Resistance, Junction-to-Ambient
Operating Junction and Storage Temperature Range
Notes
a. Pulse width limited by maximum junction temperature.
Document Number: 70200
S-04279鈥擱ev. E, 16-Jul-01
www.vishay.com
T
A
= 25_C
T
A
= 70_C
T
A
= 25_C
T
A
= 70_C
Symbol
V
DS
V
GS
I
D
I
DM
P
D
R
thJA
T
J
, T
stg
Limit
20
"20
0.39
0.25
0.75
0.35
0.22
357
鈥?5 to 150
Unit
V
A
W
_C/W
_C
11-1