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TN0200TS Datasheet

  • TN0200TS

  • N-Channel 20-V (D-S) MOSFETs

  • 67.27KB

  • 4頁(yè)

  • VISHAY   VISHAY

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TN0200T/TS
Vishay Siliconix
N-Channel 20-V (D-S) MOSFETs
PRODUCT SUMMARY
I
D
(A)
V
DS
(V)
20
r
DS(on)
(W)
0.4 @ V
GS
= 4.5 V
0.5 @ V
GS
= 2.5 V
TN0200T
0.73
0.65
TN0200TS
1.2
1.1
FEATURES
D
D
D
D
D
Low On-Resistance: 0.29
W
Low Threshold: 0.9 V (typ)
2.5-V or Lower Operation
Fast Switching Speed: 22 ns
Low Input and Output
Leakage
BENEFITS
D
D
D
D
D
Low Offset Voltage
Low-Voltage Operation
High-Speed Circuits
Low Error Voltage
Low Battery Voltage
Operation
APPLICATIONS
D
D
D
D
D
Direct Logic-Level Interfact: TTL/CMOS
Dirvers: Relays, Solenoids, Lamps, Hammers
Battery Operated Systems, DC/DC Converters
Solid-State Relays
Load/Power Switching鈭扖ell Phones, Pagers
TO-236
(SOT-23)
Top View
G
1
3
S
2
D
Marking Code:
TN0200T: NOwll
TN0200TS: NSwll
w
= Week Code
ll
= Lot Traceability
ABSOLUTE MAXIMUM RATINGS (T
A
= 25_C UNLESS OTHERWISE NOTED)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
J
= 150_C)
b
Pulsed Drain Current
a
Continuous Source Current (Diode Conduction)
b
Power Dissipation
b
Operating Junction and Storage Temperature Range
T
A
= 25_C
T
A
= 70_C
T
A
= 25_C
T
A
= 70_C
Symbol
V
DS
V
GS
I
D
I
DM
I
S
P
D
T
J
, T
stg
TN0200T
20
"8
0.73
0.58
4
0.6
0.35
0.22
TN0200TS
c
20
"8
1.2
1.0
4
1.0
1.0
0.65
Unit
V
A
W
_C
鈭?5
to 150
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient
b
Notes
a. Pulse width limited by maximum junction temperature.
b. Surface Mounted on FR4 Board, t
v
10 sec.
c. Copper lead frame.
Document Number: 70202
S-40277鈥擱ev. F, 23-Feb-04
www.vishay.com
Symbol
R
thJA
TN0200T
357
TN0200TS
c
125
Unit
_C/W
1

TN0200TS 產(chǎn)品屬性

  • Vishay

  • N-Channel

  • 20 V

  • +/- 8 V

  • 1.2 A

  • 400 mOhms at 4.5 V

  • Single

  • + 150 C

  • SMD/SMT

  • TO-236-3

  • 14 ns

  • - 55 C

  • 1000 mW

  • 14 ns

  • 1000

  • 21 ns

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