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TMS4C2972 Datasheet

  • TMS4C2972

  • 245760 BY 12-BIT FIELD MEMORY

  • 344.97KB

  • 26頁

  • TI

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TMS4C2972
245760 BY 12-BIT
FIELD MEMORY
SMGS671 鈥?OCTOBER 1997
D
D
D
D
D
D
D
D
D
D
2 949 120 Bits of Memory
Organization: 245 760 Words
脳
12 Bits
Single 5-V Power Supply (鹵 10% Tolerance)
Upwardly and Pin-to-Pin Compatible With
TMS4C2970 and TMS4C2971
2-Port Memory With FIFO Operation
鈥?Full-Word Continuous Read / Write
鈥?Asynchronous Read / Write
Optional Random-Block Access Function
(40 Words per Block) Enabled During Reset
Operation, Two Modes for Write Access:
D0- or IE-Controlled
Fully Static (Refresh-Free and Infinite
Length of Clocking Pauses)
Write-Mask Function by Input Enable (IE)
Cascade Connection Capability
High-Speed Read / Write Operation
ACCESS
TIME
(MAX)
TMS4C2972-24 19 ns
TMS4C2972-26 21 ns
TMS4C2972-28 23 ns
CYCLE TIME
READ WRITE
(MIN)
(MIN)
24 ns
24 ns
26 ns
26 ns
28 ns
28 ns
DT PACKAGE
( TOP VIEW )
V
SS1
D11
D10
D9
D8
D7
D6
D5
D4
D3
D2
D1
D0
SWCK
RSTW
WE
IE
V
DD1
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
36
35
34
33
32
31
30
29
28
27
26
25
24
23
22
21
20
19
V
SS2
Q11
Q10
Q9
Q8
Q7
Q6
Q5
Q4
Q3
Q2
Q1
Q0
SRCK
RSTR
RE
OE
V
DD2
PIN NOMENCLATURE
IE
WE
SWCK
RSTW
D0 鈥?D11
OE
RE
SRCK
RSTR
Q0 鈥?Q11
VDD1 鈥?VDD2
VSS1 鈥揤SS2
Input Enable
Write Enable
Serial-Write Clock
Reset Write
Data Inputs
Output Enable
Read Enable
Serial-Read Clock
Reset Read
Data Outputs
Power
Ground
D
D
16M-Bit CMOS DRAM Process
Technology
High-Reliability Plastic 36-Lead
Surface-Mount Shrink Small-Outline
Package ( SSOP) (DT Suffix)
description
The TMS4C2972 is a field memory (FMEM) that is upwardly and pin-to-pin compatible with the TMS4C2970
and TMS4C2971, except for the consequences of the block size change (40 instead of 80 words per block) on
old data access mode enabling (see the section titled 鈥樷€榦ld-/new-data access鈥?.
The device is a two-port memory; data is written in through a 12-bit-wide write port and is read out through a
12-bit-wide read port. Both ports may be operated simultaneously and/or asynchronously. Dynamic storage
cells are employed for main data memory to achieve high storage density, but the TMS4C2972 refreshes its
cells automatically so that device operation appears fully static to the user. All internal pointers and registers
are fully static so that read and write operations can be interrupted for indefinite periods of time without loss of
data.
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of
Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
Copyright
漏
1997, Texas Instruments Incorporated
PRODUCTION DATA information is current as of publication date.
Products conform to specifications per the terms of Texas Instruments
standard warranty. Production processing does not necessarily include
testing of all parameters.
POST OFFICE BOX 1443
鈥?/div>
HOUSTON, TEXAS 77251鈥?443
1

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