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TMS418160ADZ Datasheet

  • TMS418160ADZ

  • 1048576 BY 16-BIT DYNAMIC RANDOM-ACCESS MEMORY

  • 24頁

  • TI

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TMS418160A
1048576 BY 16-BIT
DYNAMIC RANDOM-ACCESS MEMORY
SMKS891C 鈥?AUGUST 1996 鈥?REVISED OCTOBER 1997
D
D
D
D
This data sheet is applicable to TMS418160As
symbolized by Revision 鈥淓鈥?and subsequent
revisions as described in the device
symbolization section.
Organization . . . 1 048576 by 16 Bits
Single 5-V Power Supply (鹵 10% Tolerance)
1 024-Cycle Refresh in 16 ms
Performance Ranges:
ACCESS ACCESS ACCESS
TIME
TIME
TIME
tRAC
tCAC
tAA
MAX
MAX
MAX
鈥?18160A-50
50 ns
13 ns
25 ns
鈥?18160A-60
60 ns
15 ns
30 ns
鈥?18160A-70
70 ns
18 ns
35 ns
READ/
WRITE
CYCLE
MIN
90 ns
110 ns
130 ns
DZ PACKAGE
( TOP VIEW )
D
D
D
D
D
Enhanced Page-Mode Operation With
xCAS-Before-RAS ( xCBR) Refresh
3-State Unlatched Output
Low Power Dissipation
High-Reliability Plastic 42-Lead
400-Mil-Wide Surface-Mount Small-Outline
J-Lead (SOJ) Package (DZ Suffix)
Ambient Temperature Range
0擄C to 70擄C
V
DD
DQ0
DQ1
DQ2
DQ3
V
DD
DQ4
DQ5
DQ6
DQ7
NC
NC
W
RAS
NC
NC
A0
A1
A2
A3
V
DD
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
42
41
40
39
38
37
36
35
34
33
32
31
30
29
28
27
26
25
24
23
22
V
SS
DQ15
DQ14
DQ13
DQ12
V
SS
DQ11
DQ10
DQ9
DQ8
NC
LCAS
UCAS
OE
A9
A8
A7
A6
A5
A4
V
SS
description
The TMS418160A is a 16 777 216-bit dynamic
random-access memory (DRAM) device orga-
nized as 1 048 576 words of 16 bits. It employs
state-of-the-art technology for high performance,
reliability, and low power at low cost.
This device features maximum RAS access times
of 50-, 60-, and 70 ns. All address and data-in lines
are latched on chip to simplify system design.
Data out is unlatched to allow greater system
flexibility.
The TMS418160A is offered in a 42-lead plastic
surface-mount SOJ package (DZ suffix). This
package is designed for operation from 0擄 to 70擄C.
PIN NOMENCLATURE
A[0 :9]
DQ[0:15]
LCAS
UCAS
NC
OE
RAS
VDD
VSS
W
Address Inputs
Data In / Data Out
Lower Column-Address Strobe
Upper Column-Address Strobe
No Internal Connection
Output Enable
Row-Address Strobe
5-V Supply
Ground
Write Enable
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of
Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
PRODUCTION DATA information is current as of publication date.
Products conform to specifications per the terms of Texas Instruments
standard warranty. Production processing does not necessarily include
testing of all parameters.
Copyright
漏
1997, Texas Instruments Incorporated
POST OFFICE BOX 1443
鈥?/div>
HOUSTON, TEXAS 77251鈥?443
1

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