TMS28F210
65536 BY 16-BIT
FLASH MEMORY
SMJS210D 鈥?DECEMBER 1992 鈥?REVISED AUGUST 1997
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Organization . . . 65 536 by 16-Bits
Pin Compatible With Existing 1-Megabit
EPROMs
All Inputs/Outputs TTL Compatible
V
CC
Tolerance
鹵10%
Maximum Access/Minimum Cycle Time
鈥?8F210-10 100 ns
鈥?8F210-12 120 ns
鈥?8F210-15 150 ns
鈥?8F210-17 170 ns
Industry-Standard Programming Algorithm
PEP4 Version Available With 168-Hour
Burn-In and Choice of Operating
Temperature Ranges
10 000 and 1 000 Program/Erase Cycles
Latchup Immunity of 250 mA on All Input
and Output Lines
Low Power Dissipation ( V
CC
= 5.5 V )
鈥?Active Write . . . 55 mW
鈥?Active Read . . . 165 mW
鈥?Electrical Erase . . . 82.5 mW
鈥?Standby . . . 0.55 mW
(CMOS-Input Levels)
Automotive Temperature Range
鈥?40擄C to 125擄C
FN PACKAGE
( TOP VIEW )
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description
The TMS28F210 is a 65 536 by 16-bit (1048 576-bit), programmable read-only memory that can be electrically
bulk-erased and reprogrammed. It is available in 10 000- and 1 000-program/erase-endurance-cycle versions.
The TMS28F210 flash memory is offered in a 44-lead plastic leaded chip carrier package using 1,25 mm
(50-mil) lead spacing (FN suffix), and a 40-lead thin small-outline package (DBW suffix).
The TMS28F210 is characterized for operation in temperature ranges of 0擄C to 70擄C, 鈥?40擄C to 85擄C, and
鈥?40擄C to 125擄C.
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of
Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
Copyright
漏
1997, Texas Instruments Incorporated
PRODUCTION DATA information is current as of publication date.
Products conform to specifications per the terms of Texas Instruments
standard warranty. Production processing does not necessarily include
testing of all parameters.
POST OFFICE BOX 1443
鈥?/div>
HOUSTON, TEXAS 77251鈥?443
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