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TK13H90A1 Datasheet

  • TK13H90A1

  • Swiching Regulator Applications

  • 6頁

  • TOSHIBA

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TK13H90A1
TOSHIBA Field Effect Transistor
Silicon N Channel MOS Type(MACH鈪?/div>
蟺-MOSIV)
TK13H90A1
Swiching Regulator Applications
Low drain鈭抯ource ON resistance
High forward transfer admittance
Low leakage current
Enhancement mode
: R
DS (ON)
= 0.78惟 (typ.)
: |Y
fs
| = 11S (typ.)
Unit: mm
: I
DSS
= 100
渭A
(max) (V
DS
= 720V)
: V
th
= 2.0~4.0 V (V
DS
= 10 V, I
D
= 1 mA)
Absolute Maximum Ratings
(Ta = 25擄C)
Characteristics
Drain鈭抯ource voltage
Drain鈭抔ate voltage (R
GS
= 20 k鈩?
Gate鈭抯ource voltage
Drain current
DC
(Note 1)
Symbol
V
DSS
V
DGR
V
GSS
I
D
I
DP
P
D
E
AS
I
AR
E
AR
T
ch
T
stg
Rating
900
900
鹵30
13
39
150
491
13
15
150
鈭?5~150
Unit
V
V
V
A
A
W
mJ
A
mJ
擄C
擄C
Pulse (Note 1)
1: GATE
2: DRAIN (HEAT SINK)
3: SOURCE
JEDEC
JEITA
TOSHIBA
鈥?/div>
鈥?/div>
2-16K1A
Drain power dissipation (Tc = 25擄C)
Single pulse avalanche energy
(Note 2)
Avalanche current
Repetitive avalanche energy (Note 3)
Channel temperature
Storage temperature range
Weight: 3.8 g (typ.)
Note:
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate
reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (鈥淗andling Precautions鈥?Derating Concept and
Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Thermal Characteristics
Characteristics
Thermal resistance, channel to case
Thermal resistance, channel to
ambient
Symbol
R
th (ch鈭抍)
R
th (ch鈭抋)
Max
0.833
50
Unit
擄C / W
擄C / W
1
2
Note 1: Ensure that the channel temperature does not exceed 150擄C.
Note 2: V
DD
= 90 V, T
ch
= 25擄C (initial), L = 5.3 mH, R
G
= 25
鈩?
I
AR
= 13 A
Note 3: Repetitive rating: pulse width limited by maximum channel temperature
This transistor is an electrostatic-sensitive device. Please handle with caution.
3
1
2006-11-13

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