TISP83121D
DUAL-GATE UNIDIRECTIONAL OVERVOLTAGE PROTECTOR
Copyright 漏 1999, Power Innovations Limited, UK
FEBRUARY 1999
OVERVOLTAGE PROTECTION FOR DUAL-VOLTAGE RINGING SLICS
q
Programmable Protection Configurations up
to 鹵100 V
Typically 5 Lines Protected by Two
TISP83121D + Diode Steering Networks
High Surge Current
- 150 A 10/1000 碌s
- 150 A 10/700 碌s
- 500 A 8/20 碌s
Pin compatible with the LCP3121
- Functional Replacement in Diode Steering
Network Applications
- 50% more surge current
Small Outline Surface Mount Package
- Available Ordering Options
CARRIER
Tube
Taped and reeled
PART #
TISP83121D
TISP83121DR
D PACKAGE
(TOP VIEW)
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K
G1
G2
K
1
2
3
4
8
7
6
5
K
A
A
K
MD6XAYA
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For operation at the rated current values connect
pins 1, 4, 5 and 8 together.
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device symbol
A
q
G2
G1
description
The TISP83121D is a dual-gate reverse-blocking
unidirectional thyristor designed for the
protection of dual-voltage ringing SLICs
(Subscriber Line Interface Circuits) against
overvoltages on the telephone line caused by
lightning, a.c. power contact and induction.
The device chip is a four-layer NPNP silicon
thyristor structure which has an electrode
connection to every layer. For negative
overvoltage protection the TISP83121D is used
in a common anode configuration with the
voltage to be limited applied to the cathode (K)
terminal and the negative reference potential
applied to the gate 1 (G1) terminal. For positive
overvoltage protection the TISP83121D is used
in a common cathode configuration with the
voltage to be limited applied to the anode (A)
terminal and the positive reference potential
applied to the gate 2 (G2) terminal.
The TISP83121D is a unidirectional protector
and to prevent reverse bias, requires the use of a
series diode between the protected line
conductor and the protector. Further, the gate
reference
supply
voltage
requires
an
appropriately poled series diode to prevent the
K
SD6XAKA
supply from being
TISP83121D crowbars.
shorted
when
the
Under low level power cross conditions the
TISP83121D gate current will charge the gate
reference supply. If the reference supply cannot
absorb the charging current its potential will
increase, possibly to damaging levels. To avoid
excessive voltage levels a clamp (zener or
avalanche breakdown diode) may be added in
shunt with the supply. Alternatively, a grounded
collector emitter-follower may be used to reduce
the charging current by the transistors H
FE
value.
This monolithic protection device is made with a
ion-implanted epitaxial-planar technology to give
a consistent protection performance and be
virtually transparent to the system in normal
operation.
PRODUCT INFORMATION
Information is current as of publication date. Products conform to specifications in accordance
with the terms of Power Innovations standard warranty. Production processing does not
necessarily include testing of all parameters.
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