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TISP61512P Datasheet

  • TISP61512P

  • DUAL FORWARD-CONDUCTING P-GATE THYRISTORS PROGRAMMABLE OVERV...

  • 11頁

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TISP61511D, TISP61512P
DUAL FORWARD-CONDUCTING P-GATE THYRISTORS
PROGRAMMABLE OVERVOLTAGE PROTECTORS
Copyright 漏 1997, Power Innovations Limited, UK
JULY 1995 - REVISED SEPTEMBER 1997
PROGRAMMABLE SLIC OVERVOLTAGE PROTECTION
q
Dual Voltage-Programmable Protectors.
- Wide 0 to -80 V Programming Range
- Low 5 mA max. Triggering Current
- High 150 mA min. Holding Current
Rated for International Surge Wave Shapes
VOLTAGE
WAVE SHAPE
2/10 碌s
1.2/50 碌s
0.5/700 碌s
10/700 碌s
10/1000 碌s
STANDARD
TR-NWT-001089
ETS 300 047-1
RLM88/I3124
K17, K20, K21
TR-NWT-001089
I
TSP
A
170
90
40
40
30
'61511D PACKAGE
(TOP VIEW)
(Tip)
K1
NC
1
2
3
4
8
7
6
5
K1 (Tip)
A
A
(Ground)
(Ground)
(Gate) G
(Ring) K2
q
K2 (Ring)
MD6XAL
NC - No internal connection
Terminal typical application names shown in
parenthesis
'61512P PACKAGE
(TOP VIEW)
(Tip)
K1
1
2
3
4
8
7
6
5
K1 (Tip)
A
A
(Ground)
(Ground)
q
Functional Replacements for
DEVICE TYPE
LCP1511,
LCP1511D,
ATTL7591AS,
MGSS150-1
LCP1512,
LCP1512D,
ATTL7591AB,
MGSS150-2
8-pin Plastic DIP
TISP61512P
8-pin Small-Outline
PACKAGE TYPE
FUNCTIONAL
REPLACEMENT
TISP61511D
or order as
TISP61511DR
for Taped and Reeled
(Gate) G
NC
(Ring) K2
K2 (Ring)
MD6XAJ
NC - No internal connection
Terminal typical application names shown in
parenthesis
device symbol
K1
G
K2
description
The TISP61511D and TISP61512P are dual
forward-conducting buffered p-gate overvoltage
protectors. They are designed to protect
monolithic Subscriber Line Interface Circuits,
SLICs, against overvoltages on the telephone
line caused by lightning, ac power contact and
induction. The TISP61511D and TISP61512P
limit voltages that exceed the SLIC supply rail
voltage.
A
SD6XAE
Terminals K1, K2 and A correspond to the alternative
line designators of T, R and G or A, B and C. The
negative protection voltage is controlled by the voltage,
V
GG,
applied to the G terminal.
The SLIC line driver section is typically powered
from 0 V (ground) and a negative voltage in the region of -10 V to -70 V. The protector gate is connected to
this negative supply. This references the protection (clipping) voltage to the negative supply voltage. As the
protection voltage will track the negative supply voltage the overvoltage stress on the SLIC is minimised.
Positive overvoltages are clipped to ground by diode forward conduction. Negative overvoltages are initially
clipped close to the SLIC negative supply rail value. If sufficient current is available from the overvoltage, then
the protector will crowbar into a low voltage on-state condition. As the current subsides the high holding
current of the crowbar prevents d.c. latchup.
These monolithic protection devices are fabricated in ion-implanted planar vertical power structures for high
reliability and in normal system operation they are virtually transparent. The buffered gate design reduces the
loading on the SLIC supply during overvoltages caused by power cross and induction.
PRODUCT
INFORMATION
Information is current as of publication date. Products conform to specifications in accordance
with the terms of Power Innovations standard warranty. Production processing does not
necessarily include testing of all parameters.
1

TISP61512P 產(chǎn)品屬性

  • Bourns

  • 硅對(duì)稱二端開關(guān)元件

  • 5 A

  • 100 V

  • 0.005 mA

  • 4 V

  • Through Hole

  • PDIP-8

  • 50

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