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TISP4290LP Datasheet

  • TISP4290LP

  • SYMMETRICAL TRANSIENT VOLTAGE SUPPRESSORS

  • 7頁(yè)

  • POINN

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TISP4290LP
SYMMETRICAL TRANSIENT
VOLTAGE SUPPRESSORS
Copyright 漏 1997, Power Innovations Limited, UK
APRIL 1987 - REVISED SEPTEMBER 1997
TELECOMMUNICATION SYSTEM SECONDARY PROTECTION
q
Ion-Implanted Breakdown Region
Precise and Stable Voltage
Low Voltage Overshoot under Surge
DEVICE
鈥?290LP
V
(Z)
V
200
V
(BO)
V
290
LP PACKAGE
(TOP VIEW)
A(T)
NC
B(R)
1
2
3
NC - No internal connection
MDTRAB
q
Planar Passivated Junctions
Low Off-State Current < 10 碌A(chǔ)
Rated for International Surge Wave Shapes
WAVE SHAPE
8/20 碌s
0.2/310 碌s
10/700 碌s
STANDARD
ANSI C62.41
RLM 88
VDE 0433
CCITT IX K17
I
TSP
A
150
38
50
38
q
LP PACKAGE
WITH FORMED LEADS
(TOP VIEW)
A(T)
NC
B(R)
NC - No internal connection
MD4XAF
1
2
3
q
Package Options
PACKAGE
LP
LP with fomed leads
PACKING
Bulk
Tape and Reel
PART # SUFFIX
None
R
device symbol
q
UL Recognized, E132482
description
The TISP4290LP is designed specifically for
telephone equipment protection against lightning
and transients induced by a.c. power lines.
These devices consist of a bidirectional
suppressor element connecting the A and B
terminals. They will suppress inter-wire voltage
transients.
Transients are initially clipped by zener action
until the voltage rises to the breakover level,
which causes the device to crowbar. The high
crowbar holding current prevents d.c. latchup as
the transient subsides.
These monolithic protection devices are
fabricated in ion-implanted planar structures to
ensure precise and matched breakover control
and are virtually transparent to the system in
normal operation.
PRODUCT
INFORMATION
Information is current as of publication date. Products conform to specifications in accordance
with the terms of Power Innovations standard warranty. Production processing does not
necessarily include testing of all parameters.
1

TISP4290LP 產(chǎn)品屬性

  • Bourns

  • 硅對(duì)稱二端開(kāi)關(guān)元件

  • 2.5 A

  • 0.01 mA

  • 3 V

  • + 70 C

  • Through Hole

  • TO-92

  • 0 C

  • 2000

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