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TISP2180F3 Datasheet

  • TISP2180F3

  • DUAL SYMMETRICAL TRANSIENT VOLTAGE SUPPRESSORS

  • 18頁

  • POINN

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TISP2125F3, TISP2150F3, TISP2180F3
DUAL SYMMETRICAL TRANSIENT
VOLTAGE SUPPRESSORS
Copyright 漏 1997, Power Innovations Limited, UK
MARCH 1994 - REVISED SEPTEMBER 1997
TELECOMMUNICATION SYSTEM SECONDARY PROTECTION
q
Ion-Implanted Breakdown Region
Precise and Stable Voltage
Low Voltage Overshoot under Surge
DEVICE
鈥?125F3
鈥?150F3
鈥?180F3
V
DRM
V
100
120
145
V
(BO)
V
125
150
180
D PACKAGE
(TOP VIEW)
T
NC
NC
R
1
2
3
4
8
7
6
5
G
G
G
G
MDXXAE
NC - No internal connection
P PACKAGE
(TOP VIEW)
q
Planar Passivated Junctions
Low Off-State Current < 10 碌A(chǔ)
Rated for International Surge Wave Shapes
WAVE SHAPE
2/10 碌s
8/20 碌s
10/160 碌s
10/560 碌s
0.5/700 碌s
10/700 碌s
10/1000 碌s
STANDARD
FCC Part 68
ANSI C62.41
FCC Part 68
FCC Part 68
RLM 88
FTZ R12
VDE 0433
CCITT IX K17/K20
REA PE-60
I
TSP
A
175
120
60
45
38
50
50
50
35
q
T
G
G
R
1
2
3
4
8
7
6
5
T
G
G
R
MDXXAF
Specified T terminal ratings require connection of pins 1 and 8.
Specified R terminal ratings require connection of pins 4 and 5.
SL PACKAGE
(TOP VIEW)
T
G
1
2
3
MDXXAG
MD23AA
q
Surface Mount and Through-Hole Options
PACKAGE
Small-outline
Small-outline taped
and reeled
Plastic DIP
Single-in-line
PART # SUFFIX
D
DR
P
SL
R
device symbol
T
R
q
UL Recognized, E132482
description
These medium voltage dual symmetrical
transient voltage suppressor devices are
designed to protect ISDN and telecommunication
applications with battery backed ringing against
transients caused by lightning strikes and a.c.
power lines. Offered in three voltage variants to
meet battery and protection requirements they
are guaranteed to suppress and withstand the
listed international lightning surges in both
polarities. Transients are initially clipped by
breakdown clamping until the voltage rises to the
breakover level, which causes the device to
SD2XAA
G
Terminals T, R and G correspond to the
alternative line designators of A, B and C
crowbar. The high crowbar holding current
prevents d.c. latchup as the current subsides.
These monolithic protection devices are
fabricated in ion-implanted planar structures to
ensure precise and matched breakover control
PRODUCT
INFORMATION
Information is current as of publication date. Products conform to specifications in accordance
with the terms of Power Innovations standard warranty. Production processing does not
necessarily include testing of all parameters.
1

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