TIS75
TIS75
N-Channel General Purpose Amplifier
鈥?This device is designed for low level analog switching, sample and
hold circuits and chopper stabilized amplifiers.
鈥?Sourced from process 54.
1
TO-92
1. Gate 2. Source 3. Drain
Absolute Maximum Ratings *
T
a
=25擄C unless otherwise noted
Symbol
V
DG
V
GS
I
GF
T
J
, T
STG
Drain-Gate Voltage
Gate-Source Voltage
Forward Gate Current
Operating and Storage Junction Temperature Range
Parameter
Value
30
-30
10
-55 ~ +150
Units
V
V
mA
擄C
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1. These ratings are based on a maximum junction temperature of 150 degrees C.
2. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Electrical Characteristics
T
a
=25擄C unless otherwise noted
Symbol
Off Characteristics
V
(BR)GSS
I
GSS
I
D
(off)
Parameter
Test Condition
I
G
= 1.0碌A(chǔ), V
DS
= 0
V
GS
= 15V, V
DS
= 0
V
GS
= 15V, V
DS
= 0, T
a
= 100擄C
V
DS
= 15V, V
GS
= -10V
V
DS
= 15V, V
GS
= -10V,
T
a
= 100擄C
V
DS
= 20V, I
D
= 4.0nA
V
DS
= 15V, V
GS
= 0
V
DS
鈮?/div>
0.1V, V
GS
= 0
V
DS
= 0, V
GS
= -10V, f = 1.0MHz
V
DS
= 0, V
GS
= -10V, f = 1.0MHz
V
GS
(off) = -4.0V, V
GS
(on) = 0,
I
D
= 5.0mA, V
DS
= 10V
-0.8
8
Min.
-30
-2.0
-5.0
-2.0
-5.0
-4.0
80
60
18
8.0
10
10
100
Typ.
Max.
Units
V
nA
碌A(chǔ)
nA
碌A(chǔ)
V
mA
鈩?/div>
pF
pF
ns
ns
ns
Gate-Source Breakdown Voltage
Gate Reverse Current
Drain Cutoff Leakage Current
V
GS
(off)
I
DSS
r
DS
(on)
C
iss
C
rss
t
r
t
on
Gate-Source Cutoff Voltage
Zero-Gate Voltage Drain Current *
Drain-Source On Resistance
Input Capacitance
Reverse Transfer Capacitance
Rise Time
Turn-On Time
On Characteristics *
Small Signal Characteristics
Switching Characteristics
t
off
Turn-Off Time
* Pulse Test: Pulse Width
鈮?/div>
300碌s, Duty Cycle
鈮?/div>
3.0%
漏2004 Fairchild Semiconductor Corporation
Rev. A, June 2004
1
2
3
4
