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TIPL762A Datasheet

  • TIPL762A

  • NPN SILICON POWER TRANSISTORS

  • 8頁(yè)

  • POINN

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TIPL762, TIPL762A
NPN SILICON POWER TRANSISTORS
Copyright 漏 1997, Power Innovations Limited, UK
AUGUST 1978 - REVISED MARCH 1997
q
q
q
Rugged Triple-Diffused Planar Construction
6 A Continuous Collector Current
Operating Characteristics Fully Guaranteed
at 100擄C
1000 Volt Blocking Capability
120 W at 25擄C Case Temperature
E
3
Pin 2 is in electrical contact with the mounting base.
MDTRAA
SOT-93 PACKAGE
(TOP VIEW)
B
1
q
q
C
2
absolute maximum ratings
at 25擄C case temperature (unless otherwise noted)
RATING
Collector-base voltage (I
E
= 0)
Collector-emitter voltage (V
BE
= 0)
Collector-emitter voltage (I
B
= 0)
Emitter-base voltage
Continuous collector current
Peak collector current (see Note 1)
Continuous device dissipation at (or below) 25擄C case temperature
Operating junction temperature range
Storage temperature range
NOTE
1: This value applies for t
p
鈮?/div>
10 ms, duty cycle
鈮?/div>
2%.
TIPL762
TIPL762A
TIPL762
TIPL762A
TIPL762
TIPL762A
SYMBOL
V
CBO
V
CES
V
CEO
V
EBO
I
C
I
CM
P
tot
T
j
T
stg
VALUE
850
1000
850
1000
400
450
10
6
12
120
-65 to +150
-65 to +150
UNIT
V
V
V
V
A
A
W
擄C
擄C
PRODUCT
INFORMATION
Information is current as of publication date. Products conform to specifications in accordance
with the terms of Power Innovations standard warranty. Production processing does not
necessarily include testing of all parameters.
1

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