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TIPL760C Datasheet

  • TIPL760C

  • NPN SILICON POWER TRANSISTORS

  • 7頁

  • POINN

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TIPL760B, TIPL760C
NPN SILICON POWER TRANSISTORS
Copyright 漏 1997, Power Innovations Limited, UK
MAY 1989 - REVISED MARCH 1997
q
q
q
Rugged Triple-Diffused Planar Construction
4 A Continuous Collector Current
Operating Characteristics Fully Guaranteed
at 100擄C
1200 Volt Blocking Capability
75 W at 25擄C Case Temperature
TO-220 PACKAGE
(TOP VIEW)
B
C
E
1
2
3
q
q
Pin 2 is in electrical contact with the mounting base.
MDTRACA
absolute maximum ratings
at 25擄C case temperature (unless otherwise noted)
RATING
Collector-base voltage (I
E
= 0)
Collector-emitter voltage (V
BE
= 0)
Collector-emitter voltage (I
B
= 0)
Emitter-base voltage
Continuous collector current
Peak collector current (see Note 1)
Continuous device dissipation at (or below) 25擄C case temperature
Operating junction temperature range
Storage temperature range
NOTE
1: This value applies for t
p
鈮?/div>
10 ms, duty cycle
鈮?/div>
2%.
TIPL760B
TIPL760C
TIPL760B
TIPL760C
TIPL760B
TIPL760C
SYMBOL
V
CBO
V
CES
V
CEO
V
EBO
I
C
I
CM
P
tot
T
j
T
stg
VALUE
1100
1200
1100
1200
500
550
10
4
8
75
-65 to +150
-65 to +150
UNIT
V
V
V
V
A
A
W
擄C
擄C
PRODUCT
INFORMATION
Information is current as of publication date. Products conform to specifications in accordance
with the terms of Power Innovations standard warranty. Production processing does not
necessarily include testing of all parameters.
1

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