TIP47/48/49/50
TIP47/48/49/50
High Voltage and Switching Applications
鈥?High Sustaining Voltage : V
CEO
(sus) = 250 - 400V
鈥?1A Rated Collector Current
NPN Silicon Transistor
Absolute Maximum Ratings
T
C
=25擄C unless otherwise noted
Symbol
V
CBO
Parameter
Collector-Base Voltage
: TIP47
: TIP48
: TIP49
: TIP50
Collector-Emitter Voltage
: TIP47
: TIP48
: TIP49
: TIP50
1
TO-220
2.Collector
3.Emitter
Units
V
V
V
V
V
V
V
V
V
A
A
A
W
W
擄C
擄C
1.Base
Value
350
400
450
500
250
300
350
400
5
1
2
0.6
40
2
150
- 65 ~ 150
V
CEO
V
EBO
I
C
I
CP
I
B
P
C
P
C
T
J
T
STG
Emitter-Base Voltage
Collector Current (DC)
Collector Current (Pulse)
Base Current
Collector Dissipation (T
C
=25擄C)
Collector Dissipation (T
a
=25擄C)
Junction Temperature
Storage Temperature
Electrical Characteristics
T
C
=25擄C unless otherwise noted
Symbol
V
CEX
(sus)
Parameter
Collector-Emitter Sustaining Voltage
: TIP47
: TIP48
: TIP49
: TIP50
Collector Cut-off Current : TIP47
: TIP48
: TIP49
: TIP50
Collector Cut-off Current : TIP47
: TIP48
: TIP49
: TIP50
Emitter Cut-off Current
* DC Current Gain
* Collector-Emitter Saturation Voltage
* Base-Emitter Saturation Voltage
Current Gain Bandwidth Product
Turn ON Time
Storage Time
Fall Time
Test Condition
I
C
= 30mA, I
B
= 0
Min.
250
300
350
400
1
1
1
1
1
1
1
1
1
30
10
150
1
1.5
10
0.5
3
0.3
V
V
MHz
碌s
碌s
碌s
Max.
Units
V
V
V
V
mA
mA
mA
mA
mA
mA
mA
mA
mA
I
CEO
V
CE
= 150V, I
B
= 0
V
CE
= 200V, I
B
= 0
V
CE
= 250V, I
B
= 0
V
CE
= 300V, I
B
= 0
V
CE
= 350V, V
BE
= 0
V
CE
= 400V, V
BE
= 0
V
CE
= 450V, V
BE
= 0
V
CE
= 500V, V
BE
= 0
V
EB
= 5V, I
C
= 0
V
CE
= 10V, I
C
= 0.3A
V
CE
= 10V, I
C
= 1A
I
C
= 1A, I
B
= 0.2A
V
CE
= 10V, I
C
= 1A
V
CE
=10V, I
C
= 0.2A
V
CC
= 400V
5I
B1
= -2.5I
B2
= I
C
= 6A
R
L
= 66.7鈩?/div>
I
CEX
I
EBO
h
FE
V
CE
(sat)
V
BE
(sat)
f
T
t
ON
t
STG
t
F
* Pulse Test: PW鈮?00碌s, duty Cycle碌2% Pulse
漏2000 Fairchild Semiconductor International
Rev. A, February 2000
next