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TIP41 Series(TIP41/41A/41B/41C)

TIP41 Series(TIP41/41A/41B/41C)

Medium Power Linear Switching Applications

鈥?Complement to TIP42/42A/42B/42C

1

TO-220

2.Collector

3.Emitter

1.Base

NPN Epitaxial Silicon Transistor

Absolute Maximum Ratings

T

C

=25擄C unless otherwise noted

Symbol

V

CBO

Parameter

Collector-Emitter Voltage: TIP41

: TIP41A

: TIP41B

: TIP41C

Collector-Emitter Voltage: TIP41

: TIP41A

: TIP41B

: TIP41C

Emitter-Base Voltage

Collector Current (DC)

Collector Current (Pulse)

Base Current

Collector Dissipation (T

C

=25擄C)

Collector Dissipation (T

a

=25擄C)

Junction Temperature

Storage Temperature

Value

40

60

80

100

40

60

80

100

5

6

10

2

65

2

150

- 65 ~ 150

Units

V

V

V

V

V

V

V

V

V

A

A

A

W

W

擄C

擄C

V

CEO

V

EBO

I

C

I

CP

I

B

P

C

P

C

T

J

T

STG

Electrical Characteristics

T

C

=25擄C unless otherwise noted

Symbol

V

CEO

(sus)

Parameter

* Collector-Emitter Sustaining Voltage

: TIP41

: TIP41A

: TIP41B

: TIP41C

Collector Cut-off Current

: TIP41/41A

: TIP41B/41C

Collector Cut-off Current

: TIP41

: TIP41A

: TIP41B

: TIP41C

Emitter Cut-off Current

* DC Current Gain

* Collector-Emitter Saturation Voltage

* Base-Emitter Saturation Voltage

Current Gain Bandwidth Product

Test Condition

I

C

= 30mA, I

B

= 0

Min.

40

60

80

100

0.7

0.7

400

400

400

400

1

30

15

75

Max.

Units

V

V

V

V

mA

mA

碌A(chǔ)

碌A(chǔ)

碌A(chǔ)

碌A(chǔ)

mA

I

CEO

V

CE

= 30V, I

B =

0

V

CE

= 60V, I

B

= 0

V

CE

= 40V, V

EB

= 0

V

CE

= 60V, V

EB

= 0

V

CE

= 80V, V

EB

= 0

V

CE

= 100V, V

EB

= 0

V

EB

= 5V, I

C

= 0

V

CE

= 4V,I

C

= 0.3A

V

CE

= 4V, I

C

= 3A

I

C

= 6A, I

B

= 600mA

V

CE

= 4V, I

C

= 6A

V

CE

= 10V, I

C

= 500mA

3.0

I

CES

I

EBO

h

FE

V

CE

(sat)

V

BE

(sat)

f

T

1.5

2.0

V

V

MHz

* Pulse Test: PW鈮?00碌s, Duty Cycle鈮?%

漏2000 Fairchild Semiconductor International

Rev. A, February 2000

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