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. . . designed for use in general purpose amplifier and switching applications.
Compact TO鈥?20 AB package.
(1) Pulse Test: Pulse Width
300
碌s,
Duty Cycle
2.0%.
(2) fT =
錚磆
fe
錚粹€?/div>
ftest.
(3) This rating based on testing with LC = 20 mH, RBE = 100
鈩?
VCC = 10 V, IC = 1.8 A, P.R.F = 10 Hz.
漏
Motorola, Inc. 1995
Motorola Bipolar Power Transistor Device Data
Complementary Silicon Plastic
Power Transistors
SEMICONDUCTOR TECHNICAL DATA
MOTOROLA
ELECTRICAL CHARACTERISTICS
(TC = 25
_
C unless otherwise noted)
THERMAL CHARACTERISTICS
MAXIMUM RATINGS
DYNAMIC CHARACTERISTICS
ON CHARACTERISTICS (1)
OFF CHARACTERISTICS
REV 1
DC Current Gain (IC = 0.2 Adc, VCE = 4.0 Vdc)
DC Current Gain
(IC = 1.0 Adc, VCE = 4.0 Vdc)
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Operating and Storage Junction
Temperature Range
Unclamped Inductive Load Energy
(See Note 3)
Total Power Dissipation @ TA = 25
_
C
Derate above 25
_
C
Total Power Dissipation @ TC = 25
_
C
Derate above 25
_
C
Base Current
Collector Current 鈥?Continuous
Peak
Emitter鈥揃ase Voltage
Collector鈥揃ase Voltage
Collector鈥揈mitter Voltage
Small鈥揝ignal Current Gain (IC = 0.2 Adc, VCE = 10 Vdc, f = 1.0 kHz)
Current鈥揋ain 鈥?Bandwidth Product (2)
(IC = 200 mAdc, VCE = 10 Vdc, ftest = 1.0 MHz)
Base鈥揈mitter On Voltage (IC = 1.0 Adc, VCE = 4.0 Vdc)
Collector鈥揈mitter Saturation Voltage (IC = 1.0 Adc, IB = 125 mAdc)
Emitter Cutoff Current (VBE = 5.0 Vdc, IC = 0)
Collector Cutoff Current
(VCE = 80 Vdc, VEB = 0)
(VCE = 100 Vdc, VEB = 0)
Collector Cutoff Current (VCE = 60 Vdc, IB = 0)
Collector鈥揈mitter Sustaining Voltage (1)
(IC = 30 mAdc, IB = 0)
Characteristic
Rating
v
Characteristic
TIP29B, TIP30B
TIP29C, TIP30C
TIP29B, TIP30B
TIP29C, TIP30C
Symbol
Symbol
TJ, Tstg
VCEO
VCB
v
R
胃JC
R
胃JA
VEB
IC
PD
IB
PD
E
TIP29B
TIP30B
80
80
鈥?65 to + 150
2.0
0.016
4.167
62.5
Max
30
0.24
0.4
1.0
3.0
5.0
32
TIP29C
TIP30C
100
100
VCEO(sus)
VCE(sat)
VBE(on)
Symbol
ICEO
ICES
IEBO
hFE
hfe
fT
Watts
W/
_
C
Watts
W/
_
C
_
C/W
_
C/W
Unit
Unit
Adc
Adc
Vdc
Vdc
Vdc
mJ
_
C
Min
80
100
3.0
20
40
15
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
1 AMPERE
POWER TRANSISTORS
COMPLEMENTARY
SILICON
80 鈥?100 VOLTS
30 WATTS
TIP29B
TIP29C
PNP
TIP30B
TIP30C
CASE 221A鈥?6
TO鈥?20AB
Max
200
200
Order this document
by TIP29B/D
1.3
0.7
1.0
0.3
鈥?/div>
75
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
NPN
mAdc
mAdc
碌Adc
MHz
Unit
Vdc
Vdc
Vdc
鈥?/div>
鈥?/div>
1

TIP29B 產(chǎn)品屬性

  • 50

  • 分離式半導體產(chǎn)品

  • 晶體管(BJT) - 單路

  • -

  • NPN

  • 1A

  • 80V

  • 700mV @ 125mA，1A

  • 300µA

  • 15 @ 1A，4V

  • 2W

  • 3MHz

  • 通孔

  • TO-220-3

  • TO-220AB

  • 管件

  • TIP29BOS

TIP29B相關型號PDF文件下載

  • 型號
    版本
    描述
    廠商
    下載
  • 英文版
    COMPLEMENTARY SILICON EPITAXIAL-BASE POWER TRANSISTORS
    MICRO-ELECTRONI...
  • 英文版
    General purpose Amplifier and Switching Applications
    BOCA
  • 英文版
    Medium Power Linear Switching Applications
    FAIRCHILD
  • 英文版
    NPN SILICON POWER TRANSISTORS
    TRSYS
  • 英文版
    NPN SILICON POWER TRANSISTORS
    POINN
  • 英文版
    POWER TRANSISTORS(1.0A,40-100V,30W)
    MOSPEC
  • 英文版
    TRANS NPN 40V 1A TO-220
  • 英文版
    Silicon NPN Power Transistors
    SAVANTIC [...
  • 英文版
    isc Silicon NPN Power Transistors
    ISC [Incha...
  • 英文版
    Medium Power Linear Switching Applications
    FAIRCHILD ...
  • 英文版
    General purpose Amplifier and Switching Applications
    BOCA [Boca...
  • 英文版
    NPN SILICON POWER TRANSISTORS
    TRSYS [TRS...
  • 英文版
    NPN SILICON POWER TRANSISTORS
    POINN [Pow...
  • 英文版
    COMPLEMENTARY SILICON EPITAXIAL-BASE POWER TRANSISTORS
    MICRO-ELECTRONI...
  • 英文版
    POWER TRANSISTORS(1.0A,40-100V,30W)
    MOSPEC [Mo...
  • 英文版
    8 Mbytes Flash Memory
    ETC [ETC]
  • 英文版
    NPN SILICON POWER TRANSISTORS
    POINN
  • 英文版
    NPN SILICON POWER TRANSISTORS
    TRSYS
  • 英文版
    General purpose Amplifier and Switching Applications
    BOCA
  • 英文版
    POWER TRANSISTORS(1.0A,40-100V,30W)
    MOSPEC

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