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. . . designed for use in general purpose amplifier and switching applications.

Compact TO鈥?20 AB package.

(1) Pulse Test: Pulse Width

300

碌s,

Duty Cycle

2.0%.

(2) fT =

錚磆

fe

錚粹€?/div>

ftest.

(3) This rating based on testing with LC = 20 mH, RBE = 100

鈩?

VCC = 10 V, IC = 1.8 A, P.R.F = 10 Hz.

漏

Motorola, Inc. 1995

Motorola Bipolar Power Transistor Device Data

Complementary Silicon Plastic

Power Transistors

SEMICONDUCTOR TECHNICAL DATA

MOTOROLA

ELECTRICAL CHARACTERISTICS

(TC = 25

_

C unless otherwise noted)

THERMAL CHARACTERISTICS

MAXIMUM RATINGS

DYNAMIC CHARACTERISTICS

ON CHARACTERISTICS (1)

OFF CHARACTERISTICS

REV 1

DC Current Gain (IC = 0.2 Adc, VCE = 4.0 Vdc)

DC Current Gain

(IC = 1.0 Adc, VCE = 4.0 Vdc)

Thermal Resistance, Junction to Case

Thermal Resistance, Junction to Ambient

Operating and Storage Junction

Temperature Range

Unclamped Inductive Load Energy

(See Note 3)

Total Power Dissipation @ TA = 25

_

C

Derate above 25

_

C

Total Power Dissipation @ TC = 25

_

C

Derate above 25

_

C

Base Current

Collector Current 鈥?Continuous

Peak

Emitter鈥揃ase Voltage

Collector鈥揃ase Voltage

Collector鈥揈mitter Voltage

Small鈥揝ignal Current Gain (IC = 0.2 Adc, VCE = 10 Vdc, f = 1.0 kHz)

Current鈥揋ain 鈥?Bandwidth Product (2)

(IC = 200 mAdc, VCE = 10 Vdc, ftest = 1.0 MHz)

Base鈥揈mitter On Voltage (IC = 1.0 Adc, VCE = 4.0 Vdc)

Collector鈥揈mitter Saturation Voltage (IC = 1.0 Adc, IB = 125 mAdc)

Emitter Cutoff Current (VBE = 5.0 Vdc, IC = 0)

Collector Cutoff Current

(VCE = 80 Vdc, VEB = 0)

(VCE = 100 Vdc, VEB = 0)

Collector Cutoff Current (VCE = 60 Vdc, IB = 0)

Collector鈥揈mitter Sustaining Voltage (1)

(IC = 30 mAdc, IB = 0)

Characteristic

Rating

v

Characteristic

TIP29B, TIP30B

TIP29C, TIP30C

TIP29B, TIP30B

TIP29C, TIP30C

Symbol

TJ, Tstg

VCEO

VCB

v

R

胃JC

R

胃JA

VEB

IC

PD

IB

PD

E

TIP29B

TIP30B

80

鈥?65 to + 150

2.0

0.016

4.167

62.5

Max

30

0.24

0.4

1.0

3.0

5.0

32

TIP29C

TIP30C

100

VCEO(sus)

VCE(sat)

VBE(on)

Symbol

ICEO

ICES

IEBO

hFE

hfe

fT

Watts

W/

_

C

Watts

W/

_

C

_

C/W

_

C/W

Unit

Adc

Vdc

mJ

_

C

Min

80

100

3.0

20

40

15

鈥?/div>

1 AMPERE

POWER TRANSISTORS

COMPLEMENTARY

SILICON

80 鈥?100 VOLTS

30 WATTS

TIP29B

TIP29C

PNP

TIP30B

TIP30C

CASE 221A鈥?6

TO鈥?20AB

Max

200

Order this document

by TIP29B/D

1.3

0.7

1.0

0.3

鈥?/div>

75

鈥?/div>

NPN

mAdc

碌A(chǔ)dc

MHz

Unit

Vdc

鈥?/div>

1

標準包裝
50
類別
分離式半導體產(chǎn)品
家庭
晶體管(BJT) - 單路
系列
-
晶體管類型
NPN
電流 - 集電極 (Ic)（最大）
1A
電壓 - 集電極發(fā)射極擊穿（最大）
80V
Ib、Ic條件下的Vce飽和度（最大）
700mV @ 125mA，1A
電流 - 集電極截止（最大）
300µA
在某 Ic、Vce 時的最小直流電流增益 (hFE)
15 @ 1A，4V
功率 - 最大
2W
頻率 - 轉(zhuǎn)換
3MHz
安裝類型
通孔
封裝/外殼
TO-220-3
供應(yīng)商設(shè)備封裝
TO-220AB
包裝
管件
其它名稱
TIP29BOS

TIP29B相關(guān)型號PDF文件下載

型號

版本

描述

廠商

下載
TIP29

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ETC [ETC]

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TIP29A

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NPN SILICON POWER TRANSISTORS

POINN

TIP29A
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NPN SILICON POWER TRANSISTORS

TRSYS

TIP29A
TIP29A

英文版

General purpose Amplifier and Switching Applications

BOCA

TIP29A
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MOSPEC

TIP29A

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