TIP160, TIP161, TIP162
NPN SILICON POWER DARLINGTONS
Copyright 漏 1997, Power Innovations Limited, UK
JUNE 1973 - REVISED MARCH 1997
q
q
q
q
q
50 W at 25擄C Case Temperature
10 A Continuous Collector Current
15 A Peak Collector Current
Maximum V
CE(sat)
of 2.8 V at I
C
= 6.5 A
I
CEX(sus)
7 A at rated V
(BR)CEO
C
2
SOT-93 PACKAGE
(TOP VIEW)
B
1
E
3
Pin 2 is in electrical contact with the mounting base.
MDTRAA
absolute maximum ratings
at 25擄C case temperature (unless otherwise noted)
RATING
TIP160
Collector-base voltage (I
E
= 0)
TIP161
TIP162
TIP160
Collector-emitter voltage (I
B
= 0)
Emitter-base voltage
Continuous collector current
Peak collector current (see Note 1)
Peak commutating anti-parallel diode current (I
B
= 0) (see Note 2)
Continuous base current
Continuous device dissipation at (or below) 100擄C case temperature (see Note 3)
Continuous device dissipation at (or below) 25擄C free air temperature (see Note 4)
Operating junction temperature range
Storage temperature range
Lead temperature 3.2 mm from case for 10 seconds
NOTES: 1.
2.
3.
4.
TIP161
TIP162
V
EBO
I
C
I
CM
I
EM
I
B
P
tot
P
tot
T
j
T
stg
T
L
V
CEO
V
CBO
SYMBOL
VALUE
320
350
380
320
350
380
5
10
15
10
1
50
3
-65 to +150
-65 to +150
260
V
A
A
A
A
W
W
擄C
擄C
擄C
V
V
UNIT
This value applies for t
p
鈮?/div>
10 ms, duty cycle
鈮?/div>
10%.
This value applies to the total collector-terminal current when the collector is at negative potential with respect to the emitter.
Derate linearly to 150擄C case temperature at the rate of 0.4 W/擄C.
Derate linearly to 150擄C free air temperature at the rate of 24 mW/擄C.
PRODUCT
INFORMATION
Information is current as of publication date. Products conform to specifications in accordance
with the terms of Power Innovations standard warranty. Production processing does not
necessarily include testing of all parameters.
1
1
2
3
4
5
6
7
