TIP145, TIP146, TIP147
PNP SILICON POWER DARLINGTONS
Copyright 漏 1997, Power Innovations Limited, UK
DECEMBER 1971 - REVISED MARCH 1997
q
Designed for Complementary Use with
TIP140, TIP141 and TIP142
125 W at 25擄C Case Temperature
B
SOT-93 PACKAGE
(TOP VIEW)
1
q
q
q
10 A Continuous Collector Current
Minimum h
FE
of 1000 at 4 V, 5 A
C
2
E
3
Pin 2 is in electrical contact with the mounting base.
MDTRAA
absolute maximum ratings
at 25擄C case temperature (unless otherwise noted)
RATING
TIP145
Collector-base voltage (I
E
= 0)
TIP146
TIP147
TIP145
Collector-emitter voltage (I
B
= 0)
Emitter-base voltage
Continuous collector current
Peak collector current (see Note 1)
Continuous base current
Continuous device dissipation at (or below) 25擄C case temperature (see Note 2)
Continuous device dissipation at (or below) 25擄C free air temperature (see Note 3)
Unclamped inductive load energy (see Note 4)
Operating junction temperature range
Storage temperature range
Lead temperature 3.2 mm from case for 10 seconds
NOTES: 1.
2.
3.
4.
TIP146
TIP147
V
EBO
I
C
I
CM
I
B
P
tot
P
tot
錕?frac12;LI
C
T
j
T
stg
T
L
2
SYMBOL
V
CBO
VALUE
-60
-80
-100
-60
UNIT
V
V
CEO
-80
-100
-5
-10
-15
-0.5
125
3.5
100
-65 to +150
-65 to +150
260
V
V
A
A
A
W
W
mJ
擄C
擄C
擄C
This value applies for t
p
鈮?/div>
0.3 ms, duty cycle
鈮?/div>
10%.
Derate linearly to 150擄C case temperature at the rate of 1 W/擄C.
Derate linearly to 150擄C free air temperature at the rate of 28 mW/擄C.
This rating is based on the capability of the transistor to operate safely in a circuit of: L = 20 mH, I
B(on)
= -5 mA, R
BE
= 100
鈩?
V
BE(off)
= 0, R
S
= 0.1
鈩?
V
CC
= -20 V.
PRODUCT
INFORMATION
Information is current as of publication date. Products conform to specifications in accordance
with the terms of Power Innovations standard warranty. Production processing does not
necessarily include testing of all parameters.
1
1
2
3
4
5
6
