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TIP146T Datasheet

  • TIP146T

  • Monolithic Construction With Built In Base-Emitter Shunt Res...

  • 4頁

  • FAIRCHILD

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TIP145T/146T/147T
TIP145T/146T/147T
Monolithic Construction With Built In Base-
Emitter Shunt Resistors
鈥?High DC Current Gain : h
FE
= 1000@ V
CE
= - 4V, I
C
= - 5A (Min.)
鈥?Industrial Use
鈥?Complement to TIP140T/141T/142T
1
TO-220
2.Collector
3.Emitter
1.Base
PNP Epitaxial Silicon Darlington Transistor
Absolute Maximum Ratings
T
C
=25擄C unless otherwise noted
Symbol
V
CBO
Parameter
Collector-Base Voltage
: TIP145T
: TIP146T
: TIP147T
Value
- 60
- 80
- 100
- 60
- 80
- 100
-5
- 10
- 15
- 0.5
80
150
- 65 ~ 150
Units
V
V
V
V
V
V
V
A
A
A
W
擄C
擄C
R1
R2
E
Equivalent Circuit
C
B
V
CEO
V
EBO
I
C
I
CP
I
B
P
C
T
J
T
STG
Collector-Emitter Voltage : TIP145T
: TIP146T
: TIP147T
Emitter-Base Voltage
Collector Current (DC)
Collector Current (Pulse)
Base Current (DC)
Collector Dissipation (T
C
=25擄C)
Junction Temperature
Storage Temperature
R1
鈮?/div>
8k
鈩?/div>
R
2
鈮?/div>
0.12
k
鈩?/div>
Electrical Characteristics
T
C
=25擄C unless otherwise noted
Symbol
V
CEO
(sus)
Parameter
Collector-Emitter Sustaining Voltage
: TIP145T
: TIP146T
: TIP147T
Collector Cut-off Current
: TIP145T
: TIP146T
: TIP147T
I
CBO
Collector Cut-off Current
: TIP145T
: TIP146T
: TIP147T
I
EBO
h
FE
V
CE
(sat)
V
BE
(sat)
V
BE
(on)
t
D
t
R
t
STG
t
F
Emitter Cut-off Current
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Base-Emitter On Voltage
Delay Time
Rise Time
Storage Time
Fall Time
V
CB
= - 60V, I
E
= 0
V
CB
= - 80V, I
E
= 0
V
CB
= - 100V, I
E
= 0
V
BE
= - 5V, I
C
= 0
V
CE
= - 4V, I
C
= - 5A
V
CE
= - 4V, I
C
= - 10A
I
C
= - 5A, I
B
= - 10mA
I
C
= - 10A, I
B
= - 40mA
I
C
= - 10A, I
B
= - 40mA
V
CE
= - 4V, I
C
= - 10A
V
CC
= - 30V, I
C
= - 5A
I
B1
= -20mA, I
B2
= 20mA
R
L
= 6鈩?/div>
0.15
0.55
2.5
2.5
1000
500
-2
-3
- 3.5
-3
V
V
V
V
碌s
碌s
碌s
碌s
Rev. B, December 2002
Test Condition
I
C
= - 30mA, I
B
= 0
Min.
- 60
- 80
- 100
Typ.
Max.
Units
V
V
V
I
CEO
V
CE
= - 30V, I
B
= 0
V
CE
= - 40V, I
B
= 0
V
CE
= - 50V, I
B
= 0
-2
-2
-2
-1
-1
-1
-2
mA
mA
mA
mA
mA
mA
mA
漏2002 Fairchild Semiconductor Corporation

TIP146T 產(chǎn)品屬性

  • Fairchild Semiconductor

  • Transistors Darlington

  • Single

  • PNP

  • 80 V

  • 5 V

  • 80 V

  • 10 A

  • 1000 uA

  • + 150 C

  • Through Hole

  • TO-220AB

  • Bulk

  • 500 at 10 A at 4 V, 1000 at 5 A at 4 V

  • - 65 C

  • 200

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    DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS
    ONSEMI [ON...
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  • 英文版
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    FAIRCHILD
  • 英文版
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    MOSPEC
  • 英文版
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    ONSEMI
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