SEMICONDUCTOR
TECHNICAL DATA
MONOLITHIC CONSTRUCTION WITH BUILT IN
BASE-EMITTER SHUNT RESISTORS INDUSTRIAL USE.
U
TIP112F
EPITAXIAL PLANAR NPN TRANSISTOR
A
C
FEATURES
High DC Current Gain.
: h
FE
=1000(Min.),
V
CE
=4V, I
C
=1A.
Low Collector-Emitter Saturation Voltage.
Complementary to TIP117F.
E
S
K
L
M
D
D
L
T
MAXIMUM RATING (Ta=25
CHARACTERISTIC
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
DC
Collector Current
Pulse
Base Current
Collector Power
Dissipation
Junction Temperature
Storage Temperature Range
DC
Ta=25
Tc=25
)
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
CP
I
B
P
C
T
j
T
stg
RATING
100
100
5
2
A
4
50
2
W
20
150
mA
UNIT
T
N
N
T
V
Q
V
V
O
1
2
3
DIM
A
B
C
D
E
F
G
H
R
J
K
L
M
V
N
O
P
Q
R
H
S
T
U
V
MILLIMETERS
10.30 MAX
15.30 MAX
2.70 0.30
0.85 MAX
桅3.20
0.20
3.00 0.30
12.30 MAX
0.75 MAX
13.60 0.50
3.90 MAX
1.20
1.30
2.54
4.50 0.20
6.80
2.60 0.20
10
25
5
0.5
2.60 0.15
F
G
J
1. BASE
B
TO-220IS
EQUIVALENT CIRCUIT
C
-65 150
B
P
2. COLLECTOR
3. EMITTER
R
1
=
10k鈩?/div>
R
2
=
0.6k鈩?/div>
E
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Collector-Emitter Sustaining Voltage
Collector-Emitter Saturation Voltage
Base-Emitter On Voltage
Collector Output Capacitance
SYMBOL
I
CEO
I
CBO
I
EBO
h
FE
V
CEO(SUS)
V
CE(sat)
V
BE(ON)
C
ob
TEST CONDITION
V
CE
=50V, I
B
=0
V
CB
=100V, I
E
=0
V
EB
=5V, I
C
=0
V
CE
=4V, I
C
=1A
V
CE
=4V, I
C
=2A
I
C
=30mA, I
B
=0
I
C
=2A, I
B
=8mA
V
CE
=4V, I
C
=2A
V
CB
=10V, I
E
=0, f=0.1MHz
MIN.
-
-
-
1000
500
100
-
-
-
TYP.
-
-
-
-
-
-
-
-
-
MAX.
2
mA
1
2
-
-
-
2.5
2.8
100
V
V
V
pF
mA
UNIT
2002. 6. 25
Revision No : 0
1/2
1
2
