TIL191, TIL192, TIL193, TIL191A, TIL192A, TIL193A
TIL191B, TIL192B, TIL193B
OPTOCOUPLERS
SOES026B 鈥?APRIL 1989 鈥?REVISED APRIL 1998
D
D
D
D
Gallium-Arsenide-Diode Infrared Source
Source Is Optically Coupled to Silicon npn
Phototransistor
Choice of One, Two, or Four Channels
Choice of Three Current-Transfer Ratios
D
D
D
High-Voltage Electrical Isolation 3.535 kV
Peak (2.5 kV rms)
Plastic Dual-In-Line Packages
UL Listed 鈥?File #E65085
description
These optocouplers consist of one gallium-arsenide light-emitting diode and one silicon npn phototransistor per
channel. The TIL191 has a single channel in a 4-pin package, the TIL192 has two channels in an 8-package,
and the TIL193 has four channels in a 16-pin package. The standard devices, TIL191, TIL192, and TIL193, are
tested for a current-transfer ratio of 20% minimum. Devices selected for a current-transfer ratio of 50% and
100% minimum are designated with the suffix A and B respectively.
schematic diagrams
TIL191
ANODE
1
4
3
1ANODE
COLLECTOR
EMITTER
1CATHODE
2ANODE
TIL192
1ANODE
1
8
7
6
5
1COLLECTOR
1EMITTER
3CATHODE
2COLLECTOR
2EMITTER
4ANODE
8
4
5
2
3
15
14
13
12
11
10
9
TIL193
1
16
1COLLECTOR
1EMITTER
2COLLECTOR
2EMITTER
3COLLECTOR
3EMITTER
3COLLECTOR
3EMITTER
CATHODE
2
2CATHODE
3ANODE
1CATHODE
2ANODE
2
3
6
7
2CATHODE
4
4CATHODE
absolute maximum ratings at 25擄C free-air (unless otherwise noted)
鈥?/div>
Input-to-output voltage (see Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
鹵
3.535 kV peak or dc (鹵 2.5 kV rms)
Collector-emitter voltage (see Note 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 35 V
Emitter-collector voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 V
Input diode reverse voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 V
Input diode continuous forward current at (or below) 25擄C free-air temperature (see Note 3) . . . . . . . 50 mA
Continuous total power dissipation at (or below) 25擄C free-air temperature:
Phototransistor (see Note 4) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 150 mW
Input diode plus phototransistor per channel (see Note 5) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200 mW
Storage temperature range, T
stg
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 鈥?55擄C to 125擄C
Lead temperature 1,6 mm (1/16 inch) from case for 10 seconds . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 260擄C
鈥?Stresses beyond those listed under 鈥渁bsolute maximum ratings鈥?may cause permanent damage to the device. These are stress ratings only, and
functional operation of the device at these or any other conditions beyond those indicated under 鈥渞ecommended operating conditions鈥?is not
implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
NOTES: 1. This rating applies for sine-wave operation at 50 Hz or 60 Hz. This capability is verified by testing in accordance with UL requirements.
2. This value applies when the base-emitter diode is open circuited.
3. Derate linearly to 100擄C free-air temperature at the rate of 0.67 mA/擄C.
4. Derate linearly to 100擄C free-air temperature at the rate of 2 mW/擄C.
5. Derate linearly to 100擄C free-air temperature at the rate of 2.67 mW/擄C.
PRODUCTION DATA information is current as of publication date.
Products conform to specifications per the terms of Texas Instruments
standard warranty. Production processing does not necessarily include
testing of all parameters.
Copyright
漏
1998, Texas Instruments Incorporated
POST OFFICE BOX 655303
鈥?/div>
DALLAS, TEXAS 75265
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