鈥?/div>
N-Channel IGBT
Light-Controlling Flash Applications
Low-saturation voltage.
Low voltag drive (2.5V).
Enhansment type.
Built-in Gate-to-Emitter protection diode.
Mounting Height 1.1mm, Mounting Area 19.2mm
2
.
dv / dt guarantee.*
Specifications
Absolute Maximum Ratings
at Ta=25擄C
Parameter
Collector-to-Emitter Voltage
Gate-to-Emitter Voltage (DC)
Gate-to-Emitter Voltage (Pulse)
Collector Current (Pulse)
Maximum Collector-to-Emitter dv / dt
Channel Temperature
Storage Temperature
Symbol
VCES
VGES
VGES
ICP1
ICP2
dVCE / dt
Tch
Tstg
PW鈮?ms
PW鈮?00碌s, duty cycle鈮?.5%, CM=400碌F, VGE=2.5V
PW鈮?00碌s, duty cycle鈮?.5%, CM=400碌F, VGE=4V
VCE
鈮?20V,
starting Tch=25擄C
Conditions
Ratings
400
鹵6
鹵8
150
180
400
150
--40 to +150
Unit
V
V
V
A
A
V /
碌s
擄C
擄C
Electrical Characteristics
at Ta=25擄C
Parameter
Collector-to-Emitter Breakdown Voltage
Collector-to-Emitter Cutoff Current
Gate-to-Emitter Leakage Current
Symbol
V(BR)CES
ICES
IGES
Conditions
IC=2mA, VGE=0V
VCE=320V, VGE=0V
VGE=鹵6V, VCE=0V
Ratings
min
400
10
鹵10
typ
max
Unit
V
碌A(chǔ)
碌A(chǔ)
Marking : G032
Continued on next page.
*
: Conduct 100% screening of dv / dt (slope of collector voltage at the time of turn-off) by dv / dt>400V/碌s.
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the performance, characteristics, and functions of the described products in the independent state, and are not
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