TICP106 SERIES
SILICON CONTROLLED RECTIFIERS
Copyright 漏 1997, Power Innovations Limited, UK
MARCH 1988 - REVISED MARCH 1997
q
q
q
q
q
q
2 A Continuous On-State Current
15 A Surge-Current
Glass Passivated Wafer
400 V to 600 V Off-State Voltage
Max I
GT
of 200 碌A(chǔ)
Package Options
PACKAGE
LP
LP with fomed leads
PACKING
Bulk
Tape and Reel
PART # SUFFIX
(None)
R
LP PACKAGE
(TOP VIEW)
G
A
K
1
2
3
MDC1AA
LP PACKAGE
WITH FORMED LEADS
(TOP VIEW)
G
A
K
MDC1AB
1
2
3
absolute maximum ratings
over operating case temperature (unless otherwise noted)
RATING
Repetitive peak off-state voltage (see Note 1)
Repetitive peak reverse voltage
Continuous on-state current at (or below) 85擄C case temperature (see Note 2)
Surge on-state current (see Note 3)
Peak positive gate current (pulse width
鈮?/div>
300
碌s)
Average gate power dissipation (see Note 4)
Operating case temperature range
Storage temperature range
Lead temperature 3.2 mm from case for 10 seconds
TICP106D
TICP106M
TICP106D
TICP106M
SYMBOL
V
DRM
V
RRM
I
T(RMS)
I
TSM
I
GM
P
G(AV)
T
C
T
stg
T
L
VALUE
400
600
400
600
2
15
0.2
0.3
-40 to +110
-40 to +125
230
UNIT
V
V
A
A
A
W
擄C
擄C
擄C
NOTES: 1. These values apply when the gate-cathode resistance R
GK
= 1 k鈩?
2. These values apply for continuous dc operation with resistive load. Above 85擄C derate linearly to zero at 110擄C.
3. This value applies for one 50 Hz half-sine-wave when the device is operating at (or below) the rated value of peak reverse voltage
and on-state current. Surge may be repeated after the device has returned to original thermal equilibrium.
4. This value applies for a maximum averaging time of 20 ms.
PRODUCT
INFORMATION
Information is current as of publication date. Products conform to specifications in accordance
with the terms of Power Innovations standard warranty. Production processing does not
necessarily include testing of all parameters.
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