TIC253 SERIES
SILICON TRIACS
Copyright 漏 1997, Power Innovations Limited, UK
DECEMBER 1971 - REVISED MARCH 1997
q
q
q
q
q
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High Current Triacs
20 A RMS
Glass Passivated Wafer
400 V to 800 V Off-State Voltage
150 A Peak Current
Max I
GT
of 50 mA (Quadrants 1 - 3)
MT2
2
SOT-93 PACKAGE
(TOP VIEW)
MT1
1
G
3
Pin 2 is in electrical contact with the mounting base.
MDC2AD
absolute maximum ratings
over operating case temperature (unless otherwise noted)
RATING
TIC253D
Repetitive peak off-state voltage (see Note 1)
TIC253M
TIC253S
TIC253N
Full-cycle RMS on-state current at (or below) 70擄C case temperature (see Note 2)
Peak on-state surge current full-sine-wave (see Note 3)
Peak gate current
Operating case temperature range
Storage temperature range
Lead temperature 1.6 mm from case for 10 seconds
I
T(RMS)
I
TSM
I
GM
T
C
T
stg
T
L
V
DRM
SYMBOL
VALUE
400
600
700
800
20
150
鹵1
-40 to +110
-40 to +125
230
A
A
A
擄C
擄C
擄C
V
UNIT
NOTES: 1. These values apply bidirectionally for any value of resistance between the gate and Main Terminal 1.
2. This value applies for 50-Hz full-sine-wave operation with resistive load. Above 70擄C derate linearly to 110擄C case temperature at
the rate of 500 mA/擄C.
3. This value applies for one 50-Hz full-sine-wave when the device is operating at (or below) the rated value of peak reverse voltage
and on-state current. Surge may be repeated after the device has returned to original thermal equilibrium.
electrical characteristics at 25擄C case temperature (unless otherwise noted)
PARAMETER
I
DRM
Repetitive peak
off-state current
Peak gate trigger
current
V
D
= Rated V
DRM
V
supply
= +12 V鈥?/div>
I
GTM
V
supply
= +12 V鈥?/div>
V
supply
= -12 V鈥?/div>
V
supply
= -12 V鈥?/div>
V
supply
= +12 V鈥?/div>
V
GTM
Peak gate trigger
voltage
Peak on-state voltage
Holding current
V
supply
= +12 V鈥?/div>
V
supply
= -12 V鈥?/div>
V
supply
= -12 V鈥?/div>
V
TM
I
H
I
TM
= 鹵28.2 A
V
supply
= +12 V鈥?/div>
V
supply
= -12 V鈥?/div>
TEST CONDITIONS
I
G
= 0
R
L
= 10
鈩?/div>
R
L
= 10
鈩?/div>
R
L
= 10
鈩?/div>
R
L
= 10
鈩?/div>
R
L
= 10
鈩?/div>
R
L
= 10
鈩?/div>
R
L
= 10
鈩?/div>
R
L
= 10
鈩?/div>
I
G
= 50 mA
I
G
= 0
I
G
= 0
T
C
= 110擄C
t
p(g)
> 20
碌s
t
p(g)
> 20
碌s
t
p(g)
> 20
碌s
t
p(g)
> 20
碌s
t
p(g)
> 20
碌s
t
p(g)
> 20
碌s
t
p(g)
> 20
t
p(g)
> 20
碌s
(see Note 4)
Init鈥?I
TM
= 100 mA
Init鈥?I
TM
= -100 mA
7
-15
-16
28
0.7
-0.7
-0.8
0.8
鹵1.4
6
-13
2
-2
-2
2
鹵1.7
40
-40
V
mA
V
MIN
TYP
MAX
鹵2
50
-50
-50
mA
UNIT
mA
鈥?All voltages are with respect to Main Terminal 1.
NOTE 4: This parameter must be measured using pulse techniques, t
p
=
鈮?/div>
1 ms, duty cycle
鈮?/div>
2 %. Voltage-sensing contacts separate from
the current carrying contacts are located within 3.2 mm from the device body.
PRODUCT
INFORMATION
Information is current as of publication date. Products conform to specifications in accordance
with the terms of Power Innovations standard warranty. Production processing does not
necessarily include testing of all parameters.
1
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