鈮?/div>
300
碌s)
Average gate power dissipation (see Note 5)
Operating case temperature range
Storage temperature range
Lead temperature 1.6 mm from case for 10 seconds
I
T(RMS)
I
T(AV)
I
TM
I
GM
P
GM
P
G(AV)
T
C
T
stg
T
L
V
RRM
V
DRM
SYMBOL
VALUE
400
600
700
800
400
600
700
800
5
3.2
30
0.2
1.3
0.3
-40 to +110
-40 to +125
230
A
A
A
A
W
W
擄C
擄C
擄C
V
V
UNIT
NOTES: 1. These values apply when the gate-cathode resistance R
GK
= 1 k鈩?
2. These values apply for continuous dc operation with resistive load. Above 80擄C derate linearly to zero at 110擄C.
3. This value may be applied continuously under single phase 50 Hz half-sine-wave operation with resistive load. Above 80擄C derate
linearly to zero at 110擄C.
4. This value applies for one 50 Hz half-sine-wave when the device is operating at (or below) the rated value of peak reverse voltage
and on-state current. Surge may be repeated after the device has returned to original thermal equilibrium.
5. This value applies for a maximum averaging time of 20 ms.
PRODUCT
INFORMATION
Information is current as of publication date. Products conform to specifications in accordance
with the terms of Power Innovations standard warranty. Production processing does not
necessarily include testing of all parameters.
1