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THN6301S Datasheet

  • THN6301S

  • NPN Planer RF TRANSISTOR

  • 10頁

  • ETC

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THN6301S
NPN Planer RF TRANSISTOR
SOT-23
鈻?/div>
DESCRIPTION
The THN6301S is a low Noise figure and good associated
gain performance at UHF,VHF and Microwave frequencies
It is suitable for a high density surface mount since
transistor has been SOT23 package
鈻?/div>
FEATURES
o Low Noise Figure
N.F = 1.1dB TYP. @ f=1GHz, V
CE
=8V, Ic=5mA
o High Gain
MAG = 16.5dB TYP. @ f=1GHz, V
CE
=8V, Ic=15mA
o High Transition Frequency
f
T
= 10GHz TYP. @ f=1GHz, V
CE
=8V, Ic=15mA
PIN CONFIGURATION
PIN NO
1
2
3
SYMBOL
B
E
C
DESCRIPTION
Base
Emitter
Collector
Unit : mm
鈻?/div>
MARKING : AA1
鈻?/div>
MAXIMUM RATINGS
SYMBOL
V
CBO
V
CEO
V
EBO
Ic
P
T
T
STG
T
J
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current (DC)
Total Power Dissipation
Storage Temperature
Operating Junction Temperature
Ts = 60鈩?/div>
CONDITION
Open Emitter
Open Base
Open Collector
VALUE
25
12
2.5
65
150
-65 ~ 150
150
Unit
V
V
V
mA
mW
鈩?/div>
鈩?/div>
www.tachyonics.co.kr
- 1/10 -
Sep-2003
Rev 1.1

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