鈻?/div>
FEATURES
o Low Noise Figure
NF = 1.5dB at f = 2 GHz, V
CE
= 3 V, I
C
= 5 mA
NF = 1.7dB at f = 2 GHz, V
CE
= 1 V, I
C
= 3 mA
o High Gain
MAG = 12.5 dB at f = 2 GHz, V
CE
= 3 V, I
C
= 30 mA
MAG = 9.5 dB at f = 2 GHz, V
CE
= 1 V, I
C
= 7 mA
o High Transition Frequency
f
T
= 11 GHz at f = 2 GHz, V
CE
= 3 V, I
C
= 50 mA
Pin Configuration
Pin No
1
2
3
Symbol
B
E
C
Description
Base
Emitter
Collector
Unit : mm
Dimension
2.0鈪?.25, 1.0t
2.0鈪?.25, 1.0t
1.6鈪?.8, 0.8t
鈻?/div>
h
FE
Classification
Marking
h
FE
AK1
AK2
125 to 300 80 to 160
鈻?/div>
Available Package
Product
THN4501U
THN4501Z
THN4501E
Package
SOT-323
SOT-343
SOT-523
鈻?/div>
Absolute Maximum Ratings
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
T
T
STG
T
J
Parameter
Collector to Base Breakdown Voltage
Collector to Emitter Breakdown Voltage
Emitter to Base Breakdown Voltage
Collector Current (DC)
Total Power Dissipation
Storage Temperature
Operating Junction Temperature
Ratings
15
6
2.5
100
150
-65 ~ 150
150
Unit
V
V
V
mA
mW
THN4501E相關(guān)型號(hào)PDF文件下載
-
型號(hào)
版本
描述
廠商
下載
-
英文版
SiGe NPN Transistor
AUK
-
英文版
SiGe NPN Transistor
AUK [AUK c...
-
英文版
NPN SiGe RF TRANSISTOR
TACHYONICS
-
英文版
NPN SiGe RF TRANSISTOR
Tachyonics CO,....
-
英文版
SiGe NPN Transistor
AUK
-
英文版
SiGe NPN Transistor
AUK [AUK c...
-
英文版
SiGe NPN Transistor
AUK
-
英文版
SiGe NPN Transistor
AUK [AUK c...
-
英文版
NPN SiGe RF TRANSISTOR
TACHYONICS
-
英文版
SiGe NPN Transistor
AUK
-
英文版
NPN SiGe RF TRANSISTOR
Tachyonics CO,....
-
英文版
SiGe NPN Transistor
AUK
-
英文版
NPN SiGe RF TRANSISTOR
TACHYONICS
-
英文版
NPN SiGe RF TRANSISTOR
TACHYONICS ...
-
英文版
NPN SiGe RF TRANSISTOR
TACHYONICS
-
英文版
SiGe NPN Transistor
AUK
-
英文版
NPN SiGe RF TRANSISTOR
TACHYONICS ...
-
英文版
SiGe NPN Transistor
AUK
-
英文版
SiGe NPN Transistor
AUK [AUK c...
-
英文版
SiGe NPN Transistor
AUK